2N3634L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637 2N3637L 2N3637UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Symbol 2N3634* 2N3635* 2N3636* 2N3637* Unit Collector-Emitter Voltage VCEO 140 175 Vdc Collector-Base Voltage VCBO 140 175 Vdc Emitter-Base Voltage VEBO 5.0 5.0 Vdc IC 1.0 1.0 Adc Parameters / Test Conditions Collector Current Total Power Dissipation UB: @ TA = +25°C @ TC = +25°C @ TC = +25°C Operating & Storage Junction Temperature Range PT ** 1.0 5.0 1.5 W W W TJ, Tstg -65 to +200 °C TO-5* 2N3634L, 2N3635L 2N3636L, 2N3637L * Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices. ** Consult 19500/357 for De-Rating curves. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 140 175 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3634, 2N3635 2N3636, 2N3637 Collector-Base Cutoff Current VCB = 100Vdc VCB = 140Vdc VCB = 175Vdc 2N3634, 2N3635 2N3636, 2N3637 ICBO Vdc 100 10 10 ηAdc μAdc μAdc 3 PIN Emitter-Base Cutoff Current VEB = 3.0Vdc VEB = 5.0Vdc IEBO 50 10 ηAdc μAdc Collector-Emitter cutoff Current VCE = 100Vdc ICEO 10 μAdc T4-LDS-0156 Rev. 2 (101452) TO-39* (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637 2N3634UB, 2N3635UB 2N3636UB, 2N3637UB Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS Symbol Min. Max. Unit (1) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3634, 2N3636 hFE 2N3635, 2N3637 25 45 50 50 30 55 90 100 100 60 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc VCE(sat) Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc VBE(sat) 150 300 0.3 0.6 Vdc 0.65 0.8 0.9 Vdc Symbol Min. Max. Unit 2N3634, 2N3636 2N3635, 2N3637 |hfe| 1.5 2.0 8.0 8.5 2N3634, 2N3636 2N3635, 2N3637 hfe 40 80 160 320 2N3634, 2N3636 2N3635, 2N3637 hie 100 200 600 1200 Ω DYNAMIC CHARACTERISTICS Parameters / Test Conditions Forward Current Transfer Ratio IC = 30mAdc, VCE = 30Vdc, f = 100MHz Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Short-Circuit Input Impedance IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Open-Circuit Input Impedance IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz hoe 200 μs Output Capacitance VCB = 20Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Cobo 10 pF Input Capacitance VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz Cibo 75 pF Noise Figure VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0kΩ f = 100Hz f = 1.0kHz f = 10kHz NF 5.0 3.0 3.0 dB (1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% T4-LDS-0156 Rev. 2 (101452) Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 SAFE OPERATING AREA DC Tests TC = 25°C, 1 Cycle, t = 1.0s Test 1 VCE = 100Vdc, IC = 30mAdc VCE = 130Vdc, IC = 20mAdc 2N3634, 2N3635 2N3636, 2N3637 Test 2 VCE = 50Vdc, IC = 95mAdc Test 3 VCE = 5.0Vdc, IC = 1.0Adc T4-LDS-0156 Rev. 2 (101452) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Ltr CD CH HD LC LD LL LU L1 L2 P Q r TL TW α Term 1 Term 2 Term 3 Dimensions Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TYP 5.08 TYP .016 .021 0.41 0.53 See notes 7, 9, and 10 .016 .019 0.41 0.48 050 1.27 .250 6.35 .100 2.54 .050 1.27 .010 0.254 .029 .045 0.74 1.14 .028 .034 0.71 0.86 45° TP 45° TP Emitter Base Collector Inches Notes 7 6 7 7 7 5 8 4 3 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm). 3. 4. TL measured from maximum HD. CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 5. 6. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct methods or by gauge and gauging procedure. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. r (radius) applies to both inside corners of tab. 8. 9. For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum (TO-39). 10. For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum (TO-5). 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1: Physical dimensions (TO-5 and TO-39) T4-LDS-0156 Rev. 2 (101452) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are. equivalent to φx symbology Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Ltr BH BL BW CL CW LL1 LL2 LS1 LS2 LW r r1 r2 Inches Min .046 .115 .085 .022 .017 .036 .071 .016 Dimensions Millimeters Max Min Max .056 1.17 1.42 .128 2.92 3.25 .108 2.16 2.74 .128 3.25 .108 2.74 .038 0.56 0.96 .035 0.43 0.89 .040 0.91 1.02 .079 1.81 2.01 .024 0.41 0.61 .008 .203 .012 .305 .022 .559 Notes FIGURE 2: Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB version). T4-LDS-0156 Rev. 2 (101452) Page 5 of 5