2N5581

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level 2N5581 JAN JANTX JANTXV 2N5582 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > 250C 2) Derate linearly 11.43 mW/0C for TC > 250C Symbol Value Unit VCEO VCBO VEBO IC 50 75 6.0 800 0.5 2.0 -55 to +200 Vdc Vdc Vdc mAdc W W 0 C PT Top, Tstg TO-46* (TO-206AB) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 50 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 75 Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc ICBO 10 10 ηAdc µAdc IEBO 10 10 ηAdc µAdc 120101 Page 1 of 2 2N5581, 2N5582 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. hFE 30 35 40 40 20 Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC =1.0 m Adc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc IC = 0.1 mAdc, VCE = 10 Vdc IC =1.0 m Adc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc 2N5581 2N5582 hFE 50 75 100 100 30 VCE(sat) VBE(sat) 0.6 120 300 0.3 1.0 Vdc 1.2 2.0 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 10 Vdc 2N5581 2N5582 Forward Current Transfer Ratio IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 30 50 hfe 2.5 Cobo 8.0 pF Cibo 25 pF t on 35 ηs off 300 ηs SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc Turn-Off Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 t 120101 Page 2 of 2 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: Jan2N5581 Jantxv2N5582 2N5581 Jantxv2N5581 Jantx2N5581 2N5582 Jantx2N5582 Jan2N5582