2N6193

TECHNICAL DATA PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561 Devices Qualified Level 2N6193 JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range Symbol 2N6193 Units VCEO VCBO VEBO IC IB 100 100 6.0 5.0 1.0 1.0 10 -65 to +200 Vdc Vdc Vdc Adc Adc W W 0 C PT Top, Tstg TO-39* (TO-205AD) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.71mW/0C for TA > +250C 2) Derate linearly 57.1mW/0C for TC > +250C Symbol RθJC Max. 17.5 Unit C/W 0 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. VCEO(sus) 100 Max. Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage IC = 50 mAdc Collector-Emitter Cutoff Current VCE = 100 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 90 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 100 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc ICEO 100 µAdc IEBO 100 µAdc ICEX 10 µAdc ICBO 10 µAdc 120101 Page 1 of 2 2N6193 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 60 60 40 240 Unit ON CHARACTERISTICS (3) DC Current Gain IC = 0.5 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc Base-Emitter Saturation Voltage IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc VCE(sat) 0.7 1.2 Vdc VBE(sat) 1.2 1.8 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 10 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Output Capacitance VBE = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 3.0 15 Cobo 300 pF Cibo 1250 pF 100 100 2.0 200 ηs ηs µs ηs SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCC = -40 Vdc, VBE(off) = 3.0 Vdc IC = 2.0 Adc, IB1= 0.2 Adc VCC = -40 Vdc IC = 2.0 Adc, IB1 = -IB2 = 0.2 Adc t d r t s t f t SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t ≥ 0.5 s Test 1 VCE = 2.0 Vdc, IC = 5.0 Adc Test 2 VCE = 90 Vdc, IC = 55 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2