93LC66B-I/SN

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 4K Microwire Compatible Serial EEPROM Device Selection Table VCC Range ORG Pin Word Size Temp Ranges Packages 93AA66A 1.8-5.5 No 8-bit I P, SN, ST, MS, OT, MC, MN 93AA66B 1.8-5-5 No 16-bit I P, SN, ST, MS, OT, MC, MN 93LC66A 2.5-5.5 No 8-bit I, E P, SN, ST, MS, OT, MC, MN 93LC66B 2.5-5.5 No 16-bit I, E P, SN, ST, MS, OT, MC, MN 93C66A 4.5-5.5 No 8-bit I, E P, SN, ST, MS, OT, MC, MN 93C66B 4.5-5.5 No 16-bit I, E P, SN, ST, MS, OT, MC, MN 93AA66C 1.8-5.5 Yes 8- or 16-bit I P, SN, ST, MS, MC, MN Part Number 93LC66C 2.5-5.5 Yes 8- or 16-bit I, E P, SN, ST, MS, MC, MN 93C66C 4.5-5.5 Yes 8- or 16-bit I, E P, SN, ST, MS, MC, MN Features: • • • • • • • • • • • • • • Pin Function Table Low-Power CMOS Technology ORG Pin to Select Word Size for ‘66C’ Version 512 x 8-bit Organization ‘A’ Devices (no ORG) 256 x 16-bit organization ‘B’ Devices (no ORG) Self-tImed Erase/Write Cycles (including Auto-Erase) Automatic Erase All (ERAL) Before Write All (WRAL) Power-On/Off Data Protection Circuitry Industry Standard 3-Wire Serial I/O Device Status Signal (Ready/Busy) Sequential Read Function 1,000,000 Erase/Write Cycles Data Retention > 200 Years Pb-free and RoHS Compliant Temperature Ranges Supported: - Industrial (I) -40°C to +85°C - Automotive (E) -40°C to +125°C  2003-2011 Microchip Technology Inc. Name Function CS Chip Select CLK Serial Data Clock DI Serial Data Input DO Serial Data Output VSS Ground NC No internal connection ORG Memory Configuration VCC Power Supply Description: The Microchip Technology Inc. 93XX66A/B/C devices are 4Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA66C, 93LC66C or 93C66C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit communication, the 93XX66A devices are available, while the 93XX66B devices provide dedicated 16-bit communication. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile memory applications. The entire 93XX Series is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead MSOP, 6-lead SOT-23, 8-lead 2x3 DFN/TDFN and 8-lead TSSOP. All packages are Pb-free (Matte Tin) finish. DS21795E-page 1 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C Package Types (not to scale) ROTATED SOIC (ex: 93LC46BX) NC VCC CS CLK 8 ORG* 7 VSS 6 DO 5 DI 1 2 3 4 PDIP/SOIC (P, SN) CS CLK DI DO TSSOP/MSOP (ST, MS) CS CLK DI DO 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 VCC NC ORG* VSS SOT-23 (OT) VCC NC ORG* VSS DO 1 6 VCC VSS 2 5 CS DI 3 4 CLK DFN/TDFN (MC, MN) CS CLK DI DO 1 2 3 4 8 7 6 5 VCC NC ORG* VSS *ORG pin is NC on A/B devices. DS21795E-page 2  2003-2011 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†) VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ..........................................................................................................-0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65°C to +150°C Ambient temperature with power applied................................................................................................-40°C to +125°C ESD protection on all pins  4 kV † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS All parameters apply over the specified ranges unless otherwise noted. Param. Symbol No. Parameter Industrial (I): TA = -40°C to +85°C, VCC = +1.8V to +5.5V Automotive (E): TA = -40°C to +125°C, VCC = +2.5V to +5.5V Min Typ Max Units Conditions D1 VIH1 VIH2 High-level input voltage 2.0 0.7 VCC — — VCC +1 VCC +1 V V VCC 2.7V VCC < 2.7V D2 VIL1 VIL2 Low-level input voltage -0.3 -0.3 — — 0.8 0.2 VCC V V VCC 2.7V VCC < 2.7V D3 VOL1 VOL2 Low-level output voltage — — — — 0.4 0.2 V V IOL = 2.1 mA, VCC = 4.5V IOL = 100 A, VCC = 2.5V D4 VOH1 VOH2 High-level output voltage 2.4 VCC - 0.2 — — — — V V IOH = -400 A, VCC = 4.5V IOH = -100 A, VCC = 2.5V D5 ILI Input leakage current — — ±1 A VIN = VSS or VCC D6 ILO Output leakage current — — ±1 A VOUT = VSS or VCC D7 CIN, COUT Pin capacitance (all inputs/ outputs) — — 7 pF VIN/VOUT = 0V (Note 1) TA = 25°C, FCLK = 1 MHz D8 ICC write Write current — — — 500 2 — mA A FCLK = 3 MHz, Vcc = 5.5V FCLK = 2 MHz, Vcc = 2.5V D9 ICC read Read current — — — — — 100 1 500 — mA A A FCLK = 3 MHz, VCC = 5.5V FCLK = 2 MHz, VCC = 3.0V FCLK = 2 MHz, VCC = 2.5V D10 ICCS Standby current — — — — 1 5 A A I – Temp E – Temp CLK = Cs = 0V ORG = DI = VSS or VCC (Note 2) (Note 3) D11 VPOR VCC voltage detect 93AA66A/B/C, 93LC66A/B/C 93C66A/B/C — — 1.5V 3.8V — — V V (Note 1) Note 1: 2: 3: This parameter is periodically sampled and not 100% tested. ORG pin not available on ‘A’ or ‘B’ versions. Ready/Busy status must be cleared from DO; see Section 3.4 "Data Out (DO)".  2003-2011 Microchip Technology Inc. DS21795E-page 3 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C TABLE 1-2: AC CHARACTERISTICS All parameters apply over the specified ranges unless otherwise noted. Param. Symbol No. Parameter Industrial (I): TA = -40°C to +85°C, VCC = +1.8V to +5.5V Automotive (E): TA = -40°C to +125°C, VCC = +2.5V to +5.5V Min Max Units Conditions A1 FCLK Clock frequency — 3 2 1 MHz MHz MHz 4.5V VCC < 5.5V, 93XX66C only 2.5V VCC < 5.5V 1.8V VCC < 2.5V A2 TCKH Clock high time 200 250 450 — ns ns ns 4.5V VCC < 5.5V, 93XX66C only 2.5V VCC < 5.5V 1.8V VCC < 2.5V A3 TCKL Clock low time 100 200 450 — ns ns ns 4.5V VCC < 5.5V, 93XX66C only 2.5V VCC < 5.5V 1.8V VCC < 2.5V A4 TCSS Chip Select setup time 50 100 250 — ns ns ns 4.5V VCC < 5.5V 2.5V VCC < 4.5V 1.8V VCC < 2.5V A5 TCSH Chip Select hold time 0 — ns 1.8V VCC < 5.5V A6 TCSL Chip Select low time 250 — ns 1.8V VCC < 5.5V A7 TDIS Data input setup time 50 100 250 — ns ns ns 4.5V VCC < 5.5V, 93XX66C only 2.5V VCC < 5.5V 1.8V VCC < 2.5V A8 TDIH Data input hold time 50 100 250 — ns ns ns 4.5V VCC < 5.5V, 93XX66C only 2.5V VCC < 5.5V 1.8V VCC < 2.5V A9 TPD Data output delay time — 200 250 400 ns ns ns 4.5V VCC < 5.5V, CL = 100 pF 2.5V VCC < 4.5V, CL = 100 pF 1.8V VCC < 2.5V, CL = 100 pF A10 TCZ Data output disable time — 100 200 ns ns 4.5V VCC < 5.5V, (Note 1) 1.8V VCC < 4.5V, (Note 1) A11 TSV Status valid time — 200 300 500 ns ns ns 4.5V VCC < 5.5V, CL = 100 pF 2.5V VCC < 4.5V, CL = 100 pF 1.8V VCC < 2.5V, CL = 100 pF A12 TWC Program cycle time — 6 ms Erase/Write mode (AA and LC versions) A13 TWC — 2 ms Erase/Write mode (93C versions) A14 TEC — 6 ms ERAL mode, 4.5V VCC 5.5V A15 TWL — 15 ms WRAL mode, 4.5V VCC 5.5V A16 — 1M — Note 1: 2: Endurance cycles 25°C, VCC = 5.0V, (Note 2) This parameter is periodically sampled and not 100% tested. This application is not tested but ensured by characterization. For endurance estimates in a specific application, please consult the Total Endurance™ Model, which may be obtained from Microchip’s web site at www.microchip.com. DS21795E-page 4  2003-2011 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C FIGURE 1-1: CS SYNCHRONOUS DATA TIMING VIH TCSS VIL CLK TCKH TCKL TCSH VIH VIL TDIS DI TDIH VIH VIL DO (Read) DO (Program) VOH VOL VOH TPD TPD TCZ TCZ TSV Status Valid VOL Note: TSV is relative to CS. TABLE 1-3: INSTRUCTION SET FOR X16 ORGANIZATION (93XX66B OR 93XX66C WITH ORG = 1) Instruction SB Opcode Address A7 A6 A5 A4 A3 A2 A1 A0 Data In Data Out Req. CLK Cycles ERASE 1 11 — (RDY/BSY) 11 ERAL 1 00 1 0 X X X X X X — (RDY/BSY) 11 EWDS 1 00 0 0 X X X X X X — High-Z 11 EWEN 1 00 1 1 X X X X X X — High-Z 11 READ 1 10 A7 A6 A5 A4 A3 A2 A1 A0 — D15 – D0 27 WRITE 1 01 A7 A6 A5 A4 A3 A2 A1 A0 D15 – D0 (RDY/BSY) 27 WRAL 1 00 D15 – D0 (RDY/BSY) 27 0 1 X X X X X X TABLE 1-4: INSTRUCTION SET FOR X8 ORGANIZATION (93XX66A OR 93XX66C WITH ORG = 0) SB Opcode Address Data In Data Out Req. CLK Cycles ERASE 1 11 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 12 ERAL 1 00 1 0 X X X X X X X — (RDY/BSY) 12 EWDS 1 00 0 0 X X X X X X X — High-Z 12 EWEN 1 00 1 1 X X X X X X X — High-Z 12 READ 1 10 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 – D0 20 WRITE 1 01 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 – D0 (RDY/BSY) 20 WRAL 1 00 D7 – D0 (RDY/BSY) 20 Instruction 0  2003-2011 Microchip Technology Inc. 1 X X X X X X X DS21795E-page 5 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 2.0 FUNCTIONAL DESCRIPTION 2.2 Data In/Data Out (DI/DO) When the ORG pin is connected to VCC, the (x16) organization is selected. When it is connected to ground, the (x8) organization is selected. Instructions, addresses and write data are clocked into the DI pin on the rising edge of the clock (CLK). The DO pin is normally held in a High-Z state except when reading data from the device, or when checking the Ready/ Busy status during a programming operation. The Ready/Busy status can be verified during an Erase/ Write operation by polling the DO pin; DO low indicates that programming is still in progress, while DO high indicates the device is ready. DO will enter the High-Z state on the falling edge of CS. It is possible to connect the Data In and Data Out pins together. However, with this configuration it is possible for a “bus conflict” to occur during the “dummy zero” that precedes the read operation, if A0 is a logic high level. Under such a condition the voltage level seen at Data Out is undefined and will depend upon the relative impedances of Data Out and the signal source driving A0. The higher the current sourcing capability of A0, the higher the voltage at the Data Out pin. In order to limit this current, a resistor should be connected between DI and DO. 2.1 All modes of operation are inhibited when VCC is below a typical voltage of 1.5V for ‘93AA’ and ‘93LC’ devices or 3.8V for ‘93C’ devices. Start Condition The Start bit is detected by the device if CS and DI are both high with respect to the positive edge of CLK for the first time. Before a Start condition is detected, CS, CLK and DI may change in any combination (except to that of a Start condition), without resulting in any device operation (Read, Write, Erase, EWEN, EWDS, ERAL or WRAL). As soon as CS is high, the device is no longer in Standby mode. An instruction following a Start condition will only be executed if the required opcode, address and data bits for any particular instruction are clocked in. Note: When preparing to transmit an instruction, either the CLK or DI signal levels must be at a logic low as CS is toggled active high. 2.3 Data Protection The EWEN and EWDS commands give additional protection against accidentally programming during normal operation. Note: For added protection, an EWDS command should be performed after every write operation. After power-up, the device is automatically in the EWDS mode. Therefore, an EWEN instruction must be performed before the initial ERASE or WRITE instruction can be executed. Block Diagram VCC VSS Memory Array Address Decoder Address Counter Data Register Output Buffer DO DI ORG* CS CLK Mode Decode Logic Clock Register *ORG input is not available on A/B devices DS21795E-page 6  2003-2011 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 2.4 Erase The DO pin indicates the Ready/Busy status of the device if CS is brought high after a minimum of 250 ns low (TCSL). DO at logical ‘0’ indicates that programming is still in progress. DO at logical ‘1’ indicates that the register at the specified address has been erased and the device is ready for another instruction. The ERASE instruction forces all data bits of the specified address to the logical ‘1’ state. CS is brought low following the loading of the last address bit. This falling edge of the CS pin initiates the self-timed programming cycle, except on ‘93C’ devices where the rising edge of CLK before the last address bit initiates the write cycle. FIGURE 2-1: Note: Issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. ERASE TIMING FOR 93AA AND 93LC DEVICES TCSL CS Check Status CLK 1 DI 1 1 AN AN-1 AN-2 ••• A0 TCZ TSV DO High-Z Busy Ready High-Z TWC FIGURE 2-2: ERASE TIMING FOR 93C DEVICES TCSL CS Check Status CLK 1 DI 1 1 AN AN-1 AN-2 ••• A0 TCZ TSV DO High-Z Busy Ready High-Z TWC  2003-2011 Microchip Technology Inc. DS21795E-page 7 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 2.5 Erase All (ERAL) The DO pin indicates the Ready/Busy status of the device, if CS is brought high after a minimum of 250 ns low (TCSL). The Erase All (ERAL) instruction will erase the entire memory array to the logical ‘1’ state. The ERAL cycle is identical to the erase cycle, except for the different opcode. The ERAL cycle is completely self-timed and commences at the falling edge of the CS, except on ‘93C’ devices where the rising edge of CLK before the last data bit initiates the write cycle. Clocking of the CLK pin is not necessary after the device has entered the ERAL cycle. FIGURE 2-3: Note: Issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. VCC must be  4.5V for proper operation of ERAL. ERAL TIMING FOR 93AA AND 93LC DEVICES TCSL CS Check Status CLK DI 1 0 0 1 0 x ••• x TCZ TSV DO High-Z Busy Ready High-Z TEC VCC must be 4.5V for proper operation of ERAL. FIGURE 2-4: ERAL TIMING FOR 93C DEVICES TCSL CS Check Status CLK DI 1 0 0 1 0 x ••• x TCZ TSV DO High-Z Busy Ready High-Z TEC DS21795E-page 8  2003-2011 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 2.6 Erase/Write Disable and Enable (EWDS/EWEN) To protect against accidental data disturbance, the EWDS instruction can be used to disable all erase/write functions and should follow all programming operations. Execution of a READ instruction is independent of both the EWEN and EWDS instructions. The 93XX66A/B/C powers up in the Erase/Write Disable (EWDS) state. All Programming modes must be preceded by an Erase/Write Enable (EWEN) instruction. Once the EWEN instruction is executed, programming remains enabled until an EWDS instruction is executed or Vcc is removed from the device. FIGURE 2-5: EWDS TIMING TCSL CS CLK DI 1 FIGURE 2-6: 0 0 0 0 ••• x x EWEN TIMING TCSL CS CLK 1 DI 2.7 0 0 1 1 ••• x Read the rising edge of the CLK and are stable after the specified time delay (TPD). Sequential read is possible when CS is held high. The memory data will automatically cycle to the next register and output sequentially. The READ instruction outputs the serial data of the addressed memory location on the DO pin. A dummy zero bit precedes the 8-bit (If ORG pin is low or A-Version devices) or 16-bit (If ORG pin is high or B-version devices) output string. The output data bits will toggle on FIGURE 2-7: x READ TIMING CS CLK DI DO 1 1 0 High-Z  2003-2011 Microchip Technology Inc. An ••• A0 0 Dx ••• D0 Dx ••• D0 Dx ••• D0 DS21795E-page 9 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 2.8 Write The DO pin indicates the Ready/Busy status of the device, if CS is brought high after a minimum of 250 ns low (TCSL). DO at logical ‘0’ indicates that programming is still in progress. DO at logical ‘1’ indicates that the register at the specified address has been written with the data specified and the device is ready for another instruction. The WRITE instruction is followed by 8 bits (If ORG is low or A-version devices) or 16 bits (If ORG pin is high or B-version devices) of data which are written into the specified address. For 93AA66A/B/C and 93LC66A/B/C devices, after the last data bit is clocked into DI, the falling edge of CS initiates the self-timed auto-erase and programming cycle. For 93C66A/B/C devices, the selftimed auto-erase and programming cycle is initiated by the rising edge of CLK on the last data bit. FIGURE 2-8: Note: Issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. WRITE TIMING FOR 93AA AND 93LC DEVICES TCSL CS CLK DI 1 0 1 AN ••• A0 Dx ••• D0 TSV High-Z DO Busy TCZ Ready High-Z TWC FIGURE 2-9: WRITE TIMING FOR 93C DEVICES TCSL CS CLK DI 1 0 1 AN ••• A0 Dx ••• D0 TSV DO High-Z Busy TCZ Ready High-Z TWC DS21795E-page 10  2003-2011 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 2.9 Write All (WRAL) The DO pin indicates the Ready/Busy status of the device if CS is brought high after a minimum of 250 ns low (TCSL). The Write All (WRAL) instruction will write the entire memory array with the data specified in the command. For 93AA66A/B/C and 93LC66A/B/C devices, after the last data bit is clocked into DI, the falling edge of CS initiates the self-timed auto-erase and programming cycle. For 93C66A/B/C devices, the self-timed autoerase and programming cycle is initiated by the rising edge of CLK on the last data bit. Clocking of the CLK pin is not necessary after the device has entered the WRAL cycle. The WRAL command does include an automatic ERAL cycle for the device. Therefore, the WRAL instruction does not require an ERAL instruction, but the chip must be in the EWEN status. FIGURE 2-10: Note: Issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. VCC must be  4.5V for proper operation of WRAL. WRAL TIMING FOR 93AA AND 93LC DEVICES TCSL CS CLK DI 1 0 0 0 1 x ••• x Dx ••• D0 TSV High-Z DO Busy TCZ Ready HIGH-Z TWL VCC must be 4.5V for proper operation of WRAL. FIGURE 2-11: WRAL TIMING FOR 93C DEVICES TCSL CS CLK DI 1 0 0 0 1 x ••• x Dx ••• D0 TSV DO High-Z Busy TCZ Ready HIGH-Z TWL  2003-2011 Microchip Technology Inc. DS21795E-page 11 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 3.0 PIN DESCRIPTIONS TABLE 3-1: PIN DESCRIPTIONS PDIP SOIC TSSOP MSOP DFN(1) TDFN(1) SOT-23 Rotated SOIC CS 1 1 1 1 1 1 5 3 Chip Select CLK 2 2 2 2 2 2 4 4 Serial Clock Name Function DI 3 3 3 3 3 3 3 5 Data In DO 4 4 4 4 4 4 1 6 Data Out VSS 5 5 5 5 5 5 2 7 Ground ORG/NC 6 6 6 6 6 6 N/A 8 Organization / 93XX66C No Internal Connection / 93XX66A/B NC 7 7 7 7 7 7 N/A 1 No Internal Connection VCC 8 8 8 8 8 8 6 2 Power Supply Note 1: 3.1 The exposed pad on the DFN/TDFN package may be connected to VSS or left floating. Chip Select (CS) A high level selects the device; a low level deselects the device and forces it into Standby mode. However, a programming cycle which is already in progress will be completed, regardless of the Chip Select (CS) input signal. If CS is brought low during a program cycle, the device will go into Standby mode as soon as the programming cycle is completed. CS must be low for 250 ns minimum (TCSL) between consecutive instructions. If CS is low, the internal control logic is held in a Reset status. 3.2 Serial Clock (CLK) data bits before an instruction is executed. CLK and DI then become “don’t care” inputs waiting for a new Start condition to be detected. 3.3 Data In (DI) Data In (DI) is used to clock in a Start bit, opcode, address and data synchronously with the CLK input. 3.4 Data Out (DO) Data Out (DO) is used in the Read mode to output data synchronously with the CLK input (TPD after the positive edge of CLK). The Serial Clock is used to synchronize the communication between a master device and the 93XX series device. Opcodes, address and data bits are clocked in on the positive edge of CLK. Data bits are also clocked out on the positive edge of CLK. This pin also provides Ready/Busy status information during erase and write cycles. Ready/Busy status information is available on the DO pin if CS is brought high after being low for minimum Chip Select Low Time (TCSL) and an erase or write operation has been initiated. CLK can be stopped anywhere in the transmission sequence (at high or low level) and can be continued anytime with respect to Clock High Time (TCKH) and Clock Low Time (TCKL). This gives the controlling master freedom in preparing opcode, address and data. The Status signal is not available on DO, if CS is held low during the entire erase or write cycle. In this case, DO is in the High-Z mode. If status is checked after the erase/write cycle, the data line will be high to indicate the device is ready. CLK is a “don’t care” if CS is low (device deselected). If CS is high, but the Start condition has not been detected (DI = 0), any number of clock cycles can be received by the device without changing its status (i.e., waiting for a Start condition). 3.5 CLK cycles are not required during the self-timed write (i.e., auto erase/write) cycle. After detection of a Start condition the specified number of clock cycles (respectively low-to-high transitions of CLK) must be provided. These clock cycles are required to clock in all required opcode, address and DS21795E-page 12 Note: Issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. Organization (ORG) When the ORG pin is connected to VCC or Logic HI, the (x16) memory organization is selected. When the ORG pin is tied to VSS or Logic LO, the (x8) memory organization is selected. For proper operation, ORG must be tied to a valid logic level. 93XX66A devices are always (x8) organization and 93XX66B devices are always (x16) organization.  2003-2011 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 4.0 PACKAGING INFORMATION 4.1 Package Marking Information 8-Lead MSOP (150 mil) XXXXXXT YWWNNN 6-Lead SOT-23 XXNN 8-Lead PDIP Example: 3L66BI 5281L7 Example: 3EL7 Example: XXXXXXXX T/XXXNNN YYWW 93LC66B I/P e3 1L7 0528 8-Lead SOIC Example: XXXXXXXT XXXXYYWW NNN 93LC66BI SN e3 0528 1L7 8-Lead TSSOP Example: XXXX TYWW NNN 8-Lead 2x3 DFN XXX YWW NN 8-Lead 2x3 TDFN XXX YWW NN  2003-2011 Microchip Technology Inc. L66B I528 1L7 Example: 374 528 L7 Example: E74 528 L7 DS21795E-page 13 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 1st Line Marking Codes Part Number 93AA66A TSSOP MSOP A66A SOT-23 DFN TDFN I Temp. E Temp. I Temp. E Temp. I Temp. E Temp. 3A66AT 3BNN — 361 — E61 — 93AA66B A66B 3A66BT 3LNN — 371 — E71 — 93AA66C A66C 3A66CT — — 381 — E81 — 93LC66A L66A 3L66AT 3ENN 3FNN 364 — E64 E65 93LC66B L66B 3L66BT 3PNN 3RNN 374 — E74 E75 93LC66C L66C 3L66CT — — 384 — E84 E85 93C66A C66A 3C66AT 3HNN 3JNN 367 — E67 E68 93C66B C66B 3C66BT 3TNN 3UNN 377 — E77 E78 93C66C C66C 3C66CT — — 387 — E87 E88 Note: T = Temperature grade (I, E) NN = Alphanumeric traceability code Legend: XX...X T Y YY WW NNN e3 Part number or part number code Temperature (I, E) Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code (2 characters for small packages) Pb-free JEDEC designator for Matte Tin (Sn) Note: For very small packages with no room for the Pb-free JEDEC designator e3 , the marking will only appear on the outer carton or reel label. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. DS21795E-page 14  2003-2011 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2003-2011 Microchip Technology Inc. DS21795E-page 15 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS21795E-page 16  2003-2011 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2003-2011 Microchip Technology Inc. DS21795E-page 17 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C        . # #$ #/! - 0  # 1/%#  #!# ##+22---  2/ b 4 N E E1 PIN 1 ID BY LASER MARK 1 2 3 e e1 D A A2 c φ L A1 L1 3#   4# 5$8  %1 44" " 5 5 56 7 9 1#  ()* 6$# !4!1#  )* 6, :#   ;  !!1/ /