APL502B2G

APL502B2 APL502L 500V 58A 0.090Ω B2 LINEAR MOSFET T-MAX™ TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). L D • Higher FBSOA • Popular T-MAX™ or TO-264 Package • Higher Power Dissipation G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APL502B2-L UNIT 500 Volts 58 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 730 Watts Linear Derating Factor 5.84 W/°C PD TJ,TSTG 232 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 58 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 Volts ID(ON) On State Drain Current 58 Amps IDSS IGSS VGS(TH) (VDS > ID(ON) x R DS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 MAX 0.09 (VGS = 12V, 29A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 250 (VDS = VGS, ID = 2.5mA) ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor Ohms µA Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage UNIT 8-2003 RDS(ON) 2 TYP 050-5896 Rev D Symbol APL502B2-L DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 7485 9000 Coss Output Capacitance VDS = 25V 1290 1810 Reverse Transfer Capacitance f = 1 MHz 617 930 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr Rise Time td(off) Turn-off Delay Time tf Fall Time VDD = 250V 27 54 ID = 29A @ 25°C 56 84 RG = 0.6Ω 16 20 TYP MAX UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case .17 RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.78mH, R = 25Ω, Peak I = 58A j G L 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.18 0.9 0.14 0.7 0.12 0.10 0.5 Note: 0.08 0.06 PDM ZΘJC, THERMAL IMPEDANCE (°C/W) 0.16 0.3 t2 0.04 Duty Factor D = t1/t2 0.1 0.02 10-5 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.05 0 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RC MODEL Junction temp. ( ”C) 0.0602 0.0158F 0.109 0.305F Power (Watts) Case temperature 050-5896 Rev D 8-2003 t1 Downloaded from Elcodis.com electronic components distributor FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL 1.0 UNIT °C/W Typical Performance Curves 120 APL502B2-L 120 VGS=10V, 15 V ID, DRAIN CURRENT (AMPERES) 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 ID, DRAIN CURRENT (AMPERES) VGS=10, 15V 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 5.5 V 5.5 V 0 0 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @