APL602B2G

APL602B2(G) APL602L(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 600V 49A 0.125Ω B2 LINEAR MOSFET T-MAX™ TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). L D • Higher FBSOA • Popular T-MAX™ or TO-264 Package • Higher Power Dissipation G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. APL602B2-L(G) Parameter 600 Drain-Source Voltage Volts 49 Continuous Drain Current @ TC = 25°C 1 UNIT Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 730 Watts Linear Derating Factor 5.84 W/°C PD TJ,TSTG 196 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 49 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 600 Volts ID(ON) On State Drain Current 49 Amps IDSS IGSS VGS(TH) (VDS > ID(ON) x R DS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 MAX 0.125 (VGS = 12V, 24.5A) Zero Gate Voltage Drain Current (VDS = 600v, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 250 (VDS = VGS, ID = 2.5mA) ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Ohms µA Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage UNIT 8-2003 RDS(ON) 2 TYP 050-5894 Rev E Symbol APL602B2-L(G)  DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 7485 9000 Coss Output Capacitance VDS = 25V 1290 1810 Reverse Transfer Capacitance f = 1 MHz 617 930 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr td(off) tf Rise Time Turn-off Delay Time Fall Time VDD = 300V 27 54 ID = 49A @ 25°C 56 84 RG = 0.6Ω 16 20 TYP MAX UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case .17 RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 2.50mH, R = 25Ω, Peak I = 49A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.18 0.9 0.14 0.7 0.12 0.10 0.5 Note: 0.08 0.06 PDM ZΘJC, THERMAL IMPEDANCE (°C/W) 0.16 0.3 t2 0.04 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.02 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RC MODEL Junction temp. ( ”C) 0.0575 0.0187F 0.113 0.358F 8-2003 Power (Watts) 050-5894 Rev E t1 Case temperature FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL 1.0 UNIT °C/W APL602B2-L APL602B2-L(G) Typical Performance Curves 120 120 VGS=10V, 15 V 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 5.5 V 5.5 V 0 0 60 40 TJ = +125°C 20 TJ = -55°C TJ = +25°C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 1.30 1.15 NORMALIZED TO = 10V @ 29A V GS 1.20 VGS=10V 1.10 1.00 0.90 VGS=20V 0.80 0.70 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 8-2003 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @