APT10026JLL

APT10026JLL 1000V 30A 0.260Ω POWER MOS 7 R S S MOSFET 27 2 T- D G ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. SO "UL Recognized" ISOTOP ® D • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT10026JLL UNIT 1000 Volts Drain-Source Voltage 30 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 595 Watts Linear Derating Factor 4.76 W/°C PD TJ,TSTG 120 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 30 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3200 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1000 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 15A) TYP MAX Volts 0.260 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 12-2003 Characteristic / Test Conditions 050-7113 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT10026JLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1268 Reverse Transfer Capacitance f = 1 MHz 224 VGS = 10V 267 VDD = 500V 34 C rss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 38A @ 25°C tf 8 VDD = 500V ID = 38A @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 9 INDUCTIVE SWITCHING @ 25°C 6 1196 VDD = 667V, VGS = 15V ID = 38A, RG = 3Ω 713 INDUCTIVE SWITCHING @ 125°C 6 ns 39 RG = 0.6Ω Fall Time nC 17 VGS = 15V Turn-off Delay Time pF 173 RESISTIVE SWITCHING Rise Time td(off) UNIT 7114 VGS = 0V 3 MAX µJ 2014 VDD = 667V, VGS = 15V ID = 38A, RG = 3Ω 971 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 30 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -38A, dl S/dt = 100A/µs) 1182 ns Q Reverse Recovery Charge (IS = -38A, dl S/dt = 100A/µs) 31.9 µC rr dv/ dt Peak Diode Recovery dv/ 120 (Body Diode) 1.3 (VGS = 0V, IS = - 38A) dt Amps Volts 10 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.21 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 7.11mH, RG = 25Ω, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID30A di/dt ≤ 700A/µs VR ≤ 1000V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.15 0.7 0.5 Note: 0.10 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7113 Rev A 12-2003 0.25 0.20 0.3 0 t1 t2 0.05 SINGLE PULSE 0.1 0.05 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 °C/W 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT10026JLL 90 15 &10V RC MODEL Junction temp. (°C) 0.0492 Power (watts) 0.142 0.0189 0.0273F 0.469F 44.2F ID, DRAIN CURRENT (AMPERES) 80 Case temperature. (°C) VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @