APT10026L2LLG

APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Increased Power Dissipation • Easier To Drive • Lower Gate Charge, Qg • Popular TO-264 MAX Package MAXIMUM RATINGS Symbol VDSS ID D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT10026L2LL UNIT 1000 Volts Drain-Source Voltage 38 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 893 Watts Linear Derating Factor 7.14 W/°C PD TJ,TSTG 152 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 -55 to 150 °C 300 Amps 38 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3200 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1000 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 19A) TYP MAX Volts 0.260 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) 3 Ohms µA ±100 nA 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 12-2003 Characteristic / Test Conditions 050-7024 Rev B Symbol APT10026L2LL DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1268 Crss Reverse Transfer Capacitance f = 1 MHz 224 VGS = 10V 267 VDD = 500V 34 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 38A @ 25°C tf 8 VDD = 500V ID = 38A @ 25°C Turn-off Delay Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 9 INDUCTIVE SWITCHING @ 25°C 6 1196 VDD = 667V, VGS = 15V ID = 38A, RG = 3Ω 713 INDUCTIVE SWITCHING @ 125°C 6 ns 39 RG = 0.6Ω Fall Time nC 17 VGS = 15V Rise Time td(off) pF 173 RESISTIVE SWITCHING Turn-on Delay Time tr UNIT 7114 VGS = 0V 3 MAX µJ 2014 VDD = 667V, VGS = 15V ID = 38A, RG = 3Ω 971 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 38 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -38A, dl S/dt = 100A/µs) 1182 ns Q rr Reverse Recovery Charge (IS = -38A, dl S/dt = 100A/µs) 31.9 µC dv/ Peak Diode Recovery dt dv/ 152 (Body Diode) 1.3 (VGS = 0V, IS = - 38A) dt Amps Volts 10 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol MIN Characteristic RθJC Junction to Case RθJA Junction to Ambient TYP 0.14 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 4.43mH, RG = 25Ω, Peak IL = 38A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -38A di/dt ≤ 700A/µs VR ≤ 1000V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.14 0.9 0.12 0.7 0.08 0.5 Note: 0.06 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7024 Rev B 12-2003 0.16 0.10 0.3 0.04 t1 t2 0.02 Duty Factor D = t1/t2 0.1 0.05 0 10-5 SINGLE PULSE 10-4 °C/W 40 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT10026L2LL 90 15 &10V RC MODEL Junction temp. (°C) 0.0509 0.0522F Power (watts) 0.0894 0.988F ID, DRAIN CURRENT (AMPERES) 80 Case temperature. (°C) 70 6.5V 60 50 40 6V 30 20 5.5V 10 5V TJ = -55°C 80 60 40 TJ = +25°C 20 TJ = +125°C 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 40 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) NORMALIZED TO = 10V @ I = 19A GS D 1.3 1.2 VGS=10V 1.1 1.0 VGS=20V 0.9 0.8 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D 1.00 0.95 0.90 0.85 -50 = 19A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.05 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) V 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, RDS(ON) vs. TEMPERATURE 1.1 1.0 0.9 0.8 12-2003 ID, DRAIN CURRENT (AMPERES) V 1.15 35 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7024 Rev B ID, DRAIN CURRENT (AMPERES) 100 VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @