APT1003RBLLG

APT1003RBLL APT1003RSLL 1000V 4A 3.00 POWER MOS 7 R MOSFET D3PAK TO-247 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT1003RBLL_SLL UNIT 1000 Volts Drain-Source Voltage 4 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 139 Watts Linear Derating Factor 1.11 W/°C PD TJ,TSTG 16 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 4 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 10 4 mJ 425 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) 1000 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 2A) TYP MAX Volts 3.00 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) UNIT Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol APT1003RBLL_SLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 135 Reverse Transfer Capacitance f = 1 MHz 25 VGS = 10V 34 VDD = 500V 5 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 4A @ 25°C td(off) tf 4 VDD = 500V RG = 1.6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 10 INDUCTIVE SWITCHING @ 25°C 6 13 VDD = 667V, VGS = 15V 42 ID = 4A, RG = 5 INDUCTIVE SWITCHING @ 125°C 6 ns 25 ID = 4A @ 25°C Fall Time nC 8 VGS = 15V Turn-off Delay Time pF 22 RESISTIVE SWITCHING Rise Time UNIT 694 VGS = 0V 3 MAX µJ 40 VDD = 667V, VGS = 15V ID = 4A, RG = 5 48 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP 4 IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID4A, dl S /dt = 100A/µs) 560 Q rr Reverse Recovery Charge (IS = -ID4A, dl S /dt = 100A/µs) 3.2 dv/ Peak Diode Recovery dt dv/ 16 (Body Diode) 1.3 (VGS = 0V, IS = -ID4A) dt MAX 5 UNIT Amps Volts ns µC 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol R R Characteristic MIN TYP 0.90 JC Junction to Case JA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 53.13mH, RG = 25 , Peak IL = 4A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID4A di/dt 700A/µs VR VDSS TJ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 0.9 0.80 0.7 0.60 0.5 Note: 0.40 t1 0.3 SINGLE PULSE 0.20 0.1 0 t2 Duty Factor D = t1/t2 Peak TJ = PDM x Z JC + TC 0.05 10-5 10-4 °C/W 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT1003RBLL_SLL 10 VGS =15 & 10V 7.5V 8 7V 6.5V RC MODEL 6 Junction temp. (qC) 0.386 0.00336F 0.508 0.0903F Power (watts) 6V 4 5.5V 2 5V Case temperature. (qC) 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 16 14 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @