APT10045LFLLG

APT10045B2FLL APT10045LFLL 1000V 23A 0.450Ω R POWER MOS 7 FREDFET B2FLL ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID TO-264 LFLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol T-MAX™ D G S All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT10045 UNIT 1000 Volts 23 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 565 Watts Linear Derating Factor 4.52 W/°C VGSM PD TJ,TSTG 92 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts °C 300 23 (Repetitive and Non-Repetitive) 1 Amps 50 mJ 4 2500 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX UNIT 1000 Volts 23 Amps (VGS = 10V, 11.5A) 0.450 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 250 Ohms µA Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor 3-2003 BVDSS Characteristic / Test Conditions 050-7039 Rev C Symbol APT10045B2FLL - LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Input Capacitance VGS = 0V Coss Output Capacitance VDS = 25V Crss 3 Total Gate Charge Qgs Qgd Gate-Drain ("Miller ") Charge Turn-on Delay Time ID = 23A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 500V Turn-off Delay Time tf ID = 23A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Turn-on Switching Energy Eoff Turn-off Switching Energy 380 ID = 23A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 ns 639 VDD = 670V, VGS = 15V Eon nC 8 RG = 0.6Ω Eon UNIT pF 120 154 26 97 10 5 30 VGS = 10V td(on) MAX 4350 715 VDD = 500V Gate-Source Charge tr TYP f = 1 MHz Reverse Transfer Capacitance Qg MIN Test Conditions C iss µJ 1046 VDD = 670V VGS = 15V 451 ID = 23A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM Characteristic / Test Conditions MIN TYP MAX 23 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 92 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -23A) 1.3 Volts dv/ Peak Diode Recovery 18 V/ns dt dv/ dt 5 Reverse Recovery Time (IS = -23A, di/dt = 100A/µs) Tj = 25°C 340 Tj = 125°C 640 Q rr Reverse Recovery Charge (IS = -23A, di/dt = 100A/µs) Tj = 25°C 1.78 Tj = 125°C 4.47 IRRM Peak Recovery Current (IS = -23A, di/dt = 100A/µs) Tj = 25°C 11.4 Tj = 125°C 16.4 t rr ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.22 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.20 0.7 0.15 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7039 Rev C 3-2003 0.25 0.10 0.3 t1 t2 Duty Factor D = t1/t2 0.05 0.1 SINGLE PULSE 0.05 10-5 10-4 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 9.45mH, RG = 25Ω, Peak IL = 23A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID23A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0 UNIT 1.0 Typical Performance Curves APT10045B2FLL - LFLL 60 0.0893 Power (Watts) 0.0102F 0.0842 0.106F 0.0485 0.979F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( ”C) 50 7V VGS =15 & 8V 40 6.5V 30 6V 20 5.5V 10 5V Case temperature 0 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @