APT100GN60LDQ4G

厂商：
ACTEL(微芯科技)
封装：
TO264-3
描述：
IGBT 600V 229A 625W TO264

数据手册：

下载APT100GN60LDQ4G.pdf

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详情介绍
数据手册
价格&库存

APT100GN60LDQ4G 数据手册

APT100GN60LDQ4(G) 600V TYPICAL PERFORMANCE CURVES APT100GN60LDQ4 APT100GN60LDQ4G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefﬁcient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simpliﬁes gate drive design and minimizes losses. TO-264 • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise speciﬁed. Parameter APT100GN60LDQ4(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current 8 @ TC = 25°C 229 I C2 Continuous Collector Current 8 @ TC = 110°C 135 I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 1 UNIT Volts Amps 300 300A @ 600V Switching Safe Operating Area @ TJ = 175°C 625 Total Power Dissipation Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.05 1.45 1.85 50 2 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.87 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 10-2005 MIN Rev A Characteristic / Test Conditions 050-7622 Symbol APT100GN60LDQ4(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf 200 Gate Charge 9.5 VGE = 15V 600 VGE = µs VCC = 400V 65 55 RG = 1.0Ω 7 4750 TJ = +25°C 2675 Turn-on Delay Time Inductive Switching (125°C) 31 VCC = 400V 65 Current Rise Time Turn-off Delay Time VGE = 15V 350 RG = 1.0Ω 7 85 5000 I C = 100A Current Fall Time 44 Turn-on Switching Energy (Diode) µJ 5095 6 Turn-on Switching Energy ns 310 I C = 100A Eon2 nC 6 VGE = 15V Turn-on Switching Energy (Diode) V A 31 5 pF 300 Inductive Switching (25°C) 4 UNIT 340 7, VCC = 600V, VGE = 15V, Current Fall Time MAX 45 TJ = 125°C, R G = 4.3Ω 7 Turn-off Delay Time Turn-off Switching Energy 560 f = 1 MHz 15V, L = 100µH,VCE = 600V Current Rise Time Eon1 Eoff VGE = 0V, VCE = 25V TJ = 175°C, R G = 4.3Ω Turn-on Delay Time Turn-off Switching Energy 6000 I C = 100A Short Circuit Safe Operating Area TYP Capacitance VCE = 300V Switching Safe Operating Area Turn-on Switching Energy MIN 55 TJ = +125°C ns 6255 66 µJ 3300 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .21 RθJC Junction to Case (DIODE) .33 WT Package Weight 6.1 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7622 Rev A 10-2005 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁgure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package pin temperature to 100A. APT Reserves the right to change, without notice, the speciﬁcations and information contained herein. TYPICAL PERFORMANCE CURVES = 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 TJ = 175°C 200 TJ = 125°C 150 TJ = 25°C 100 TJ = -55°C 50 0 TJ = 25°C TJ = 125°C 200 150 100 50 TJ = 175°C 0 0 200 11V 150 10V 100 9V 50 8V 7V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250 TJ = -55°C 12V 250 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST

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APT100GN60LDQ4G

物料型号： - APT100GN60LDQ4(G)

器件简介： - 该IGBT利用最新的场截止和沟槽栅技术，具有超低的VCE(ON)，非常适合需要最低传导损耗的低频应用。 - 内置的栅极电阻确保了即使在短路故障事件中也能极其可靠地运行。

引脚分配： - C：集电极 - G：栅极 - E：发射极

参数特性： - 600V场截止 - 沟槽栅：低VCE(on) - 易并联 - 6µs短路能力 - 集成栅极电阻：低电磁干扰，高可靠性

功能详解： - 该器件适用于焊接、感应加热、太阳能逆变器、SMPS、电机驱动、UPS等多种应用。

应用信息： - 适用于需要低传导损耗和高可靠性的低频应用场景。

封装信息： - TO-264封装，详细尺寸和引脚布局在文档中有详细描述。

注意事项： - 这些器件对静电放电敏感，应遵循适当的处理程序。

电气特性： - 提供了最大额定值、静态电气特性和动态特性的详细数据，包括但不限于集电极-发射极电压、栅极-发射极电压、连续集电极电流、脉冲集电极电流、总功耗、工作和存储结温范围等。

热和机械特性： - 包括结到外壳的热阻、封装重量等信息。