APT100GT120JRDQ4

APT100GT120JRDQ4 1200V, 100A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. C G Features S • Low Forward Voltage Drop • RBSOA and SCSOA Rated • Low Tail Current • High Frequency Switching to 50KHz • Integrated Gate Resistor • Ultra Low Leakage Current OT 22 7 "UL Recognized" ISOTOP ® file # E145592 Low EMI, High Reliability • RoHS Compliant Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. All Ratings: TC = 25°C unless otherwise specified. Maximum Ratings Symbol Parameter Ratings VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 123 IC2 Continuous Collector Current @ TC = 100°C 67 ICM SSOA PD TJ, TSTG TL Pulsed Collector Current Unit Volts Amps 200 1 Switching Safe Operating Area @ TJ = 150°C 200A @ 1200V Total Power Dissipation 570 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Min Typ Max 1200 - - Unit V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 4mA, Tj = 25°C) 4.5 5.5 6.5 Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) 2.7 3.2 3.7 Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) - 4.0 - - - 200 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 - - TBD Gate-Emitter Leakage Current (VGE = ±20V) - - 600 nA Integrated Gate Resistor - 5 - Ω VCE(ON) ICES IGES RG(int) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Volts μA 052-6290 Rev D 1-2011 Symbol Characteristic / Test Conditions Dynamic Characteristic Symbol APT100GT120JRDQ4 Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage VGE = 0V, VCE = 25V f = 1MHz Gate Charge Min Typ Max - 6700 - - 655 - - 440 - - 10.0 - Qg Total Gate Charge VGE = 15V - 685 - Qge Gate-Emitter Charge VCE= 600V - 75 - Gate-Collector Charge IC = 100A - 400 - Qgc SSOA td(on) tr td(off) tf Eon1 Switching Safe Operating Area TJ = 150°C, RG = 1.0Ω , VGE = 15V, L = 100μH, VCE= 1200V Turn-On Delay Time - 50 - Inductive Switching (25°C) - 100 - Turn-Off Delay Time VCC = 800V 630 - Current Fall Time VGE = 15V - 36 - RG = 4.7Ω - TBD - TJ = +25°C - 17600 - Current Rise Time IC = 100A Eon2 Turn-On Switching Energy Eoff Turn-Off Switching Energy 6 - 7240 - td(on) Turn-On Delay Time - 50 - Inductive Switching (125°C) - 100 - Turn-Off Delay Time VCC = 800V - 710 - Current Fall Time VGE = 15V - 37 - Turn-On Switching Energy 4 IC = 100A TBD - Turn-On Switching Energy RG = 4.7Ω - 5 - 22380 - Turn-Off Switching Energy 6 - 10950 - Eon1 Eon2 Eoff nC A 5 tf V 150 Turn-On Switching Energy td(off) pF 7 4 tr Unit Current Rise Time TJ = 125°C ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions Min Typ Max Junction to Case (IGBT) - - 0.22 Junction to Case (DIODE) - - 0.56 Package Weight - 29.2 - g 2500 - - Volts R R θJC θJC WT VIsolation Unit °C/W RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 052-6290 Rev D 1-2011 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves V GE APT100GT120JRDQ4 250 = 15V 15V 13V 12V 125 TJ= 25°C 100 TJ= 125°C 75 TJ= 150°C 50 25 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 150 200 11V 150 10V 100 9V 50 8V 7V 125 100 75 50 TJ= -55°C TJ= 25°C 25 TJ= 125°C 0 8 6 IC = 200A 5 IC = 100A 4 3 IC = 50A 2 1 0 6 4 2 0.75 -.50 -.25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature 100 200 300 400 500 600 GATE CHARGE (nC) FIGURE 4, Gate charge 700 VGE = 15V. 250μs PULSE TEST