APT100GT60JR

APT100GT60JR 600V TYPICAL PERFORMANCE CURVES APT100GT60JR E E Thunderbolt IGBT® C G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. S • High Freq. Switching to 80KHz • Low Tail Current • Ultra Low Leakage Current 22 7 "UL Recognized" ISOTOP ® • Low Forward Voltage Drop OT file # E145592 C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 148 I C2 Continuous Collector Current @ TC = 100°C I CM SSOA PD TJ,TSTG TL Pulsed Collector Current UNIT APT100GT60JR Volts 80 1 Amps 300 300A @ 600V Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Watts 500 Operating and Storage Junction Temperature Range -55 to 150 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage 4 5 1.7 2.1 2.5 2.5 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 25 2 Gate-Emitter Leakage Current (VGE = ±30V) 300 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA TBD nA Rev B 7-2010 I GES Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3 Units Volts Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) I CES MAX 052-6274 VCE(ON) (VCE = VGE, I C = 1.5mA, Tj = 25°C) TYP APT100GT60JR DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area TYP Capacitance 5430 VGE = 0V, VCE = 25V 508 f = 1 MHz 312 Gate Charge 8.0 VGE = 15V 460 VCE = 300V 40 I C = 100A 210 3 Qg MIN TJ = 150°C, R G = 4.3Ω, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) 40 tr Current Rise Time VCC = 400V 75 Turn-off Delay Time VGE = 15V 320 Current Fall Time I C = 100A 100 Turn-on Switching Energy RG = 4.3Ω 3250 Eon1 Eon2 Eoff td(on) 4 Turn-on Switching Energy (Diode) Turn-off Switching Energy TJ = +25°C 5 Turn-on Delay Time Current Rise Time VCC = 400V 75 td(off) Turn-off Delay Time VGE = 15V 350 Current Fall Time I C = 100A 100 RG = 4.3Ω 3275 Eon2 Eoff Turn-on Switching Energy 44 Turn-on Switching Energy (Diode) Turn-off Switching Energy ns µJ 3125 tr Eon1 nC 3525 6 Inductive Switching (125°C) tf V A Turn-on Delay Time tf UNIT pF 300 td(on) td(off) MAX 55 TJ = +125°C 40 ns µJ 4650 66 3750 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .25 RθJC Junction to Case (DIODE) N/A WT VIsolation 29.2 Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6274 Rev B 7-2010 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT100GT60JR 300 200 V GE 12, 13, &15V = 15V 10V IC, COLLECTOR CURRENT (A) 140 TC = 25°C 120 TC = 125°C 100 80 TC = -55°C 60 40 250 9V 200 150 8V 100 7V 50 6V 20 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 160 140 120 100 80 TJ = 25°C 60 TJ = 125°C 40 20 0 IC = 200A 4.0 TJ = 25°C. 250µs PULSE TEST