APT100GT60JRDQ4

APT100GT60JRDQ4 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. C G Features S • Low Forward Voltage Drop • RBSOA and SCSOA Rated • Low Tail Current • High Frequency Switching to 50KHz • Integrated Gate Resistor • Ultra Low Leakage Current OT 22 7 "UL Recognized" IS OT OP ® file # E145592 Low EMI, High Reliability • RoHS Compliant All Ratings: TC = 25°C unless otherwise specified. Maximum Ratings Symbol Parameter Ratings VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 IC1 Continuous Collector Current @ TC = 25°C 148 IC2 Continuous Collector Current @ TC = 100°C 80 ICM Pulsed Collector Current 1 300 SSOA PD TJ, TSTG Unit Volts Switching Safe Operating Area @ TJ = 150°C Amps 300A @ 600V Total Power Dissipation Operating and Storage Junction Temperature Range 500 Watts -55 to 150 °C Static Electrical Characteristics Min Typ Max V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) 600 - - VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1.5mA, Tj = 25°C) 3 4 5 Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) 1.7 2.1 2.5 Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) - 2.5 - Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 - - 50 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 - - 1500 Gate-Emitter Leakage Current (VGE = ±30V) - - 300 VCE(ON) ICES IGES Volts μA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Unit nA 052-6294 Rev C 3 - 2012 Symbol Characteristic / Test Conditions Dynamic Characteristic Symbol APT100GT60JRDQ4 Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Min Typ Max - 5150 - - 475 - - 295 - - 8.0 - VGE = 15V - 460 - VGE = 0V, VCE = 25V f = 1MHz Gate Charge Qg Total Gate Charge Qge Gate-Emitter Charge VCE= 300V - 40 - Gate-Collector Charge IC = 100A - 210 - TJ = 150°C, RG = 4.3Ω , VGE = 15V, 300 Qgc SSOA td(on) tr td(off) tf 3 Switching Safe Operating Area L = 100μH, VCE= 600V Current Rise Time Turn-Off Delay Time 40 - Inductive Switching (25°C) - 75 - VCC = 400V - 320 - - 100 - RG = 4.3Ω - 3250 - TJ = +25°C - 3525 - VGE = 15V Current Fall Time IC = 100A Eon1 Turn-On Switching Energy 4 Eon2 Turn-On Switching Energy 5 Eoff Turn-Off Switching Energy 6 - 3125 - td(on) Turn-On Delay Time - 40 - Inductive Switching (125°C) - 75 - Turn-Off Delay Time VCC = 400V - 350 - Current Fall Time VGE = 15V - 100 - Turn-On Switching Energy 4 IC = 100A 3275 - Eon2 Turn-On Switching Energy RG = 4.3Ω - 5 - 4650 - Eoff Turn-Off Switching Energy 6 - 3750 - tr td(off) tf Eon1 Current Rise Time TJ = +125°C pF V nC A - Turn-On Delay Time Unit ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions Min Typ Max Unit RθJC Junction to Case (IGBT) - - 0.25 RθJC Junction to Case (DIODE) - - 0.33 WT Package Weight - 29.2 - g - - 10 in·lbf - - 1.1 N·m 2500 - - Volts °C/W Torque Terminals and Mounting Screws VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 052-6294 Rev C 3 - 2012 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves APT100GT60JRDQ4 300 200 V GE 12, 13, &15V = 15V 180 10V 250 IC, COLLECTOR CURRENT (A) 140 TC = 25°C 120 TC = 125°C 100 80 TC = -55°C 60 40 9V 200 8V 150 100 7V 50 6V 20 0 0 0.5 1 1.5 2 2.5 3 3.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 4 0 FIGURE 1, Output Characteristics(VGE = 15V) 200 IC, COLLECTOR CURRENT (A) VGE, GATE-TO-EMITTER VOLTAGE (V) TJ = -55°C 160 140 120 100 80 TC = 25°C 60 TC = 125°C 40 20 0 0 2 4 6 8 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 100A C T = 25°C J 14 VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 10 0 100 FIGURE 3, Transfer Characteristics TJ = 25°C. 250μs PULSE TEST