APT100S20BG

APT100S20BG High-Voltage Schottky Diode 1 Product Overview This section outlines the product overview for the APT100S20BG device. 1.1 Features The following are key features of the APT100S20BG device: Low forward voltage Low leakage current Ultrafast reverse recovery Avalanche energy rated RoHS compliant 1.2 Benefits The following are benefits of the APT100S20BG device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density 1.3 Applications The APT100S20BG device is designed for the following applications: Power supply and distribution Switch-mode power supply Inverter, converter, and industrial motor drivers High-speed rectifiers 053-6021 APT100S20BG Datasheet Revision D 1 2 Device Specifications This section shows the device specifications for the APT100S20BG device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the APT100S20BG device. T J = 25 °C unless otherwise specified. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 200 V VRRM Maximum peak repetitive reverse voltage VRWM Maximum working peak reverse voltage IF(AV) Maximum average forward current (TC = 125 °C, duty cycle = 0.5) 120 A IF(RMS) RMS forward current 318 IFSM Non-repetitive forward surge current (TJ = 45 °C, 8.3 ms) 1000 TJ , TSTG Operating and storage temperature range –55 to 150 TL Lead temperature for 10 seconds 300 °C The following table shows the thermal and mechanical characteristics of the APT100S20BG device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic/Test Conditions RθJC Junction-to-case thermal resistance Wt Package weight Min Typ Unit 0.18 °C/W 0.22 oz 6.2 g Maximum mounting torque, 6-32 or M3 screw 2.2 Max 10 lbf-in 1.1 N-m Electrical Performance The following table shows the static characteristics of the APT100S20BG device. T J = 25 °C unless otherwise specified. Table 3 • Static Characteristics Symbol Characteristic Test Conditions VF Forward voltage IRM CJ Maximum reverse leakage current Junction capacitance Min Typ Max IF = 100 A 0.89 0.95 IF = 200 A 1.06 IF = 100 A, TJ = 125 °C 0.76 V VR = 200 V 2 VR = 200 V, TJ = 125 °C 40 VR = 200 V 470 Unit mA pF The following table shows the dynamic characteristics of the APT100S20BG device. 053-6021 APT100S20BG Datasheet Revision D 2 The following table shows the dynamic characteristics of the APT100S20BG device. Table 4 • Dynamic Characteristics 2.3 Symbol Characteristic Test Conditions Min Typ Max Unit trr Reverse recovery time ns Reverse recovery charge 230 nC IRRM Maximum reverse recovery current IF = 100 A diF/dt = –200 A/µs VR = 133 V TJ = 25 °C 70 Qrr 6 A trr Reverse recovery time ns Reverse recovery charge 690 nC IRRM Maximum reverse recovery current IF = 100 A diF/dt = –200 A/µs VR = 133 V TJ = 125 °C 110 Qrr 11 A trr Reverse recovery time ns Reverse recovery charge 1750 nC IRRM Maximum reverse recovery current IF = 100 A diF/dt = –700 A/µs VR = 133 V TJ = 125 °C 95 Qrr 32 A Typical Performance Curves This section shows the typical performance curves for the APT100S20BG device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage (V) Figure 3 • RRT vs. Current Rate of Change 053-6021 APT100S20BG Datasheet Revision D 3 Figure 2 • Forward Current vs. Forward Voltage (V) Figure 3 • RRT vs. Current Rate of Change Figure 4 • Reverse Recovery Charge vs. Current Rate Figure 5 • Reverse Recovery Current vs. Current Rate of of Change Change Figure 6 • Dynamic Parameters vs. Junction Figure 7 • Maximum Average Forward Current vs. Case 053-6021 APT100S20BG Datasheet Revision D 4 Figure 6 • Dynamic Parameters vs. Junction Figure 7 • Maximum Average Forward Current vs. Case Temperature Temperature Figure 8 • Junction Capacitance vs. Reverse Voltage Figure 9 • Single Pulse UIS SOA 053-6021 APT100S20BG Datasheet Revision D 5 2.4 Reverse Recovery Overview The following illustration shows the diode test circuit for the APT100S20BG device. Figure 10 • Diode Test Circuit The following illustration shows the diode reverse recovery waveform and definitions for the APT100S20BG device. Figure 11 • Diode Reverse Recovery Waveform and Definitions 1. 2. 3. 4. IF—Forward conduction current diF/dt—Rate of diode current change through zero crossing IRRM—Maximum reverse recovery current trr—Reverse recovery time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through I RRM and 0.25•IRRM passes through zero 5. Qrr—Area under the curve defined by IRRM and trr 053-6021 APT100S20BG Datasheet Revision D 6 3 Package Specification This section outlines the package specification for the APT100S20BG device. 3.1 Package Outline Drawing The following figure shows the package outline drawing of the APT100S20BG device. Dimensions are in millimeters and (inches). Figure 12 • Package Outline Drawing 053-6021 APT100S20BG Datasheet Revision D 7 Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. 053-6021 | February 2019 | Final 053-6021 APT100S20BG Datasheet Revision D 8