1
3
TO
2
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
-26
4
APT100S20LCT 200V 120A
1
3
2
HIGH VOLTAGE SCHOTTKY DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-264 Package
• Rugged -
• Cooler Operation
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
48 Volt Output Rectifiers
High Speed Rectifiers
Avalanche Energy Rated
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
MAXIMUM RATINGS
Symbol
VR
Characteristic / Test Conditions
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current
TJ,TSTG
Density
APT100S20LCT
UNIT
200
Volts
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
IFSM
• Increased System Power
All Ratings Are Per Leg: TC = 25°C unless otherwise specified.
VRRM
IF(RMS)
• Higher Reliability Systems
1
120
(TC = 125°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
1
318
Amps
1000
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
-55 to 150
Operating and StorageTemperature Range
TL
Lead Temperature for 10 Sec.
300
EVAL
Avalanche Energy (2A, 50mH)
100
°C
mJ
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
TYP
MAX
IF = 100A
.89
.95
IF = 200A
1.06
IF = 100A, TJ = 125°C
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
Downloaded from Elcodis.com electronic components distributor
Volts
.76
VR = VR Rated
2
VR = VR Rated, TJ = 125°C
Microsemi Website - http://www.microsemi.com
UNIT
40
470
mA
pF
7-2006
VF
MIN
053-6025 Rev D
Symbol
DYNAMIC CHARACTERISTICS
APT100S20LCT
Characteristic
Symbol
Test Conditions
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
MIN
TYP
-
70
ns
-
230
nC
-
6
-
110
ns
-
690
nC
-
11
-
95
ns
-
1750
nC
-
32
Amps
MIN
TYP
IF = 100A, diF/dt = -200A/µs
VR = 133V, TC = 25°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 100A, diF/dt = -200A/µs
VR = 133V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 100A, diF/dt = -700A/µs
VR = 133V, TC = 125°C
Maximum Reverse Recovery Current
MAX
-
-
UNIT
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
WT
Package Weight
Torque
MAX
UNIT
.18
°C/W
0.22
oz
5.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1 Countinous current limited by package lead temperature.
0.18
D = 0.9
0.16
0.14
0.7
0.12
0.10
0.5
Note:
PDM
0.08
0.3
0.06
0.1
0.05
0.02
0
10-5
Duty Factor D = t1/t2
SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ ( C)
TC ( C)
7-2006
0.00817
053-6025 Rev D
t1
t2
0.04
0.0174
0.0593
0.095
Dissipated Power
(Watts)
0.00514
0.00242
0.0158
0.384
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Downloaded from Elcodis.com electronic components distributor
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.20
TYPICAL PERFORMANCE CURVES
180
TJ = 25°C
TJ = 125°C
60
0
TJ = 150°C
0
Qrr, REVERSE RECOVERY CHARGE
(nC)
2500
TJ = -55°C
130A
100A
1000
50A
500
60
40
20
TJ = 125°C
VR = 133V
TJ = 125°C
VR = 133V
35
130A
30
25
20
100A
15
50A
10
5
0
200
400
600
800
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
0
200
400
600
800
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
400
1.2
Duty cycle = 0.5
TJ = 150°C
Qrr
t rr
t rr
300
I RRM
0.8
Q rr
0.6
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 700A/µs)
80
0
200
400
600
800
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
0
1.0
130A
50A
100
40
2000
0
100A
0
0.5
1.0
1.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
TJ = 125°C
VR = 133V
1500
trr, REVERSE RECOVERY TIME
(ns)
240
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
300
120
APT100S20LCT
120
360
200
Lead Temperature
Limited
0.4
100
0.2
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
75
100
125
150
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
100
4000
3000
2000
1000
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
Downloaded from Elcodis.com electronic components distributor
50
10
7-2006
5000
PEAK AVALANCHE CURRENT
(A)
CJ, JUNCTION CAPACITANCE
(pF)
50
200
6000
0
25
5
1
1
10
100
1000 2500
Time in Avalanche (µs)
Figure 9. Single Pulse UIS SOA
053-6025 Rev D
0.0
APT100S20LCT
Vr
diF /dt Adjust
+18V
APT20M20LLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-264 Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
Common Cathode
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
053-6025 Rev D
7-2006
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Anode 1
Common Cathode
Anode 2
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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0.25 IRRM
