APT10M07JVFR

APT10M07JVFR Ω 100V 225A 0.007Ω POWER MOS V ® FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP ® • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular SOT-227 Package D G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT10M07JVFR UNIT 100 Volts Drain-Source Voltage 225 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 700 Watts Linear Derating Factor 5.6 W/°C VGSM PD TJ,TSTG 900 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 225 (Repetitive and Non-Repetitive) EAR Volts 1 Amps 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 100 Volts 225 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX 0.007 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 5.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 9-2004 BVDSS Characteristic / Test Conditions 050-5846 Rev A Symbol DYNAMIC CHARACTERISTICS APT10M07JVFR Characteristic Symbol Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) TYP MAX VGS = 0V 18000 21600 VDS = 25V 6800 9500 f = 1 MHz 2800 4200 VGS = 10V 700 1050 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 130 300 195 435 3 VGS = 15V 25 50 VDD = 0.5 VDSS 60 120 ID = ID [Cont.] @ 25°C 80 120 RG = 0.6Ω 20 40 TYP MAX Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf MIN Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 225 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ dt Peak Diode Recovery dv/ 900 (Body Diode) dt (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 150 250 Tj = 125°C 250 500 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 0.9 Tj = 125°C 2.5 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 12 Tj = 125°C 20 ns µC Amps THERMAL / PACKAGE CHARACTERISTICS Characteristic Symbol MIN TYP MAX 0.18 RθJC Junction to Case RθJA Junction to Ambient 40 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 2500 j G = 25Ω, Peak IL = 225A APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.05 0.2 0.1 0.01 0.005 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5846 Rev A 9-2004 0.2 0.1 0.01 SINGLE PULSE 0.0005 10-5 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-4 °C/W Volts 13 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 142µH, R UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION lb•in APT10M07JVFR 360 VGS=7V, 8V, 9V, 10V & 15V 300 6.5V 240 6V 180 5.5V 120 5V 60 ID, DRAIN CURRENT (AMPERES) VGS=15V 300 10V 9V 240 5.5V 120 5V 60 4.5V 300 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @