APT10M09B2VFR
APT10M09LVFR
100V
POWER MOS V® FREDFET
100A
0.009Ω
B2VFR
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
LVFR
• T-MAX™ or TO-264 Package
• Avalanche Energy Rated
• Faster Switching
• FAST RECOVERY BODY DIODE
D
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10M09B2VFR_LVFR
UNIT
100
Volts
Drain-Source Voltage
Continuous Drain Current
6
100
@ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.00
W/°C
PD
TJ,TSTG
1
400
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
100
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
100
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 50A)
TYP
MAX
Volts
0.009
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 80V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
Ohms
µA
±100
nA
4
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
5-2004
Characteristic / Test Conditions
050-5905 Rev A
Symbol
APT10M09B2VFR_LVFR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
3940
Reverse Transfer Capacitance
f = 1 MHz
1470
3
VGS = 10V
350
Gate-Source Charge
VDD = 50V
60
ID = 100A @ 25°C
180
VGS = 15V
18
Crss
Qg
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
9875
VDD = 50V
36
ID = 100A @ 25°C
50
RG = 0.6Ω
9
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
100
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
400
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -100A)
1.3
Volts
dv/
Peak Diode Recovery
8
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
190
Tj = 125°C
370
Q rr
Reverse Recovery Charge
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
0.4
Tj = 125°C
1.7
IRRM
Peak Recovery Current
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
9
Tj = 125°C
15
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.20
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.5
0.10
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5905 Rev A
5-2004
0.25
0.15
0.3
0.1
0
t1
t2
0.05
10-5
Duty Factor D = t1/t2
SINGLE PULSE
0.05
10-4
10-3
°C/W
4 Starting T = +25°C, L = 0.60mH, R = 25Ω, Peak I = 100A
j
G
L
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID100A di/dt ≤ 200A/µs VR ≤100V TJ ≤ 150°C
6 The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
UNIT
Peak TJ = PDM x ZθJC + TC
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
VGS =15V, 10V, & 9V
0.0302
Power
(watts)
0.0729
0.0955
0.00809F
0.0182F
0.264F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
APT10M09B2VFR_LVFR
350
300
8V
250
200
7V
150
6V
100
50
5V
Case temperature. (°C)
0
120
1.40
80
60
TJ = -55°C
40
TJ = +25°C
20
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.10
1.00
VGS=10V
VGS=20V
0.90
0.80
0
40
80
120
160
200
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.00
I
V
D
= 50A
GS
= 10V
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.20
1.15
100
1.75
GS
1.30
1.50
1.25
1.00
0.75
0.50
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
5-2004
0
TJ = +125°C
NORMALIZED TO
= 10V @ 50A
V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5905 Rev A
ID, DRAIN CURRENT (AMPERES)
100
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@
