APT10M11JVFR

APT10M11JVFR 100V Ω 0.011Ω 144A POWER MOS V ® S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP ® • Faster Switching • Avalanche Energy Rated • Lower Leakage • Popular SOT-227 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT10M11JVFR UNIT 100 Volts Drain-Source Voltage 144 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 450 Watts Linear Derating Factor 3.6 W/°C VGSM PD TJ,TSTG 576 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 144 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 100 Volts 144 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.011 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor 050-5841 Rev A 3-2004 Symbol DYNAMIC CHARACTERISTICS Symbol APT10M11JVFR Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 8600 10380 Coss Output Capacitance VDS = 25V 3200 4480 Crss Reverse Transfer Capacitance f = 1 MHz 1180 1770 VGS = 10V 300 450 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 95 110 145 165 VGS = 15V 16 32 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) 3 Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 48 96 ID = ID [Cont.] @ 25°C 51 75 RG = 0.6Ω 9 18 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 144 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 576 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 8 V/ns dv/ Peak Diode Recovery dt dv/ dt 5 t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 220 Tj = 125°C 420 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 0.8 Tj = 125°C 3.0 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 10 Tj = 125°C 18 Amps ns µC Amps THERMAL/ PACKAGE CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% MAX UNIT 0.28 40 °C/W 2500 VIsolation 1 Repetitive Rating: Pulse width limited by maximum junction TYP Volts 13 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 241µH, R j G = 25Ω, Peak IL = 144A 5 I ≤ -I [Cont.], di/ = 100A/µs, V S D DD - VDSS, Tj - 150°C, RG = 2.0Ω, dt VR = 100V. APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.2 0.05 0.1 0.05 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5841 Rev A 3-2004 0.3 0.01 0.01 SINGLE PULSE 0.001 10-5 10-4 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor lb•in 160 6V 120 5.5V 80 5V 4.5V 40 4V TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @