APT10M25BVRG

APT10M25BVR 75A 0.025Ω 100V POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested • Lower Leakage • Popular TO-247 Package TO-247 D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT10M25BVR UNIT 100 Volts Drain-Source Voltage Continuous Drain Current @ T C = 25°C 1 5 75 5 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ T C = 25°C 300 Watts Linear Derating Factor 2.4 W/°C VGSM PD TJ,TSTG 300 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 5 75 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 100 Volts 75 Amps On State Drain Current 2 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.025 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (V GS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (V DS = VGS , ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-802 8 FAX: (541) 388-036 4 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5513 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT10M25BVR Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 4300 5160 Coss Output Capacitance VDS = 25V 1600 2240 Reverse Transfer Capacitance f = 1 MHz 650 975 Crss Qg 3 Total Gate Charge Qgs VGS = 10V 150 225 VDD = 0.5 VDSS 28 42 ID = 0.5 ID[Cont.] @ 25°C 75 115 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 13 26 VDD = 0.5 VDSS 22 44 ID = ID[Cont.] @ 25°C 40 60 RG = 1.6Ω 10 20 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM Continuous Source Current 5 MIN 75 (Body Diode) UNIT Amps Pulsed Source Current 1 5 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) t Reverse Recovery Time (IS = -I D[Cont.], dl S /dt = 100A/µs) 150 ns Reverse Recovery Charge (IS = -I D[Cont.], dl S /dt = 100A/µs) 1.0 µC rr Q rr 300 (Body Diode) 1.3 Volts THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.42 1 Repetitive Rating: Pulse width limited by maximum T j 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 40 4 Starting T = +25°C, L = 0.53mH, R = 25Ω, Peak I = 75A j G L 5 The maximum current is limited by lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5513 Rev A 0.5 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION UNIT °C/W APT10M25BVR 150 VGS=10V & 15V 125 7V 100 6.5V 75 6V 50 5.5V 5V 25 4.5V I , DRAIN CURRENT (AMPERES) D 4V 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS VDS> I D (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ < 0.5 % DUTY CYCLE 100 T J = +125°C 75 50 25 T J = +125°C T J = -55°C T J = +25°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 0 , DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 60 40 0 DS 25 6.5V 75 6V 50 5.5V 5V 25 4.5V 1.2 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.1 VGS=10V 1.0 0.9 VGS =20V 0.8 0 25 50 75 100 125 150 ID , DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 2.00 GS 1.50 1.25 1.00 0.75 0.50 -50 1.2 ID = 0.5 I D [Cont.] V = 10V 1.75 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0.90 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) (ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 T C, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE R 100 DSS 20 BV I , DRAIN CURRENT (AMPERES) D 80 (ON), DRAIN-TO-SOURCE ON RESISTANCE 125 DS TJ = +25°C 7V 4V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS R I , DRAIN CURRENT (AMPERES) D T J = -55°C 10V 0 0 150 V GS=15V 125 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 T C, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5513 Rev A I , DRAIN CURRENT (AMPERES) D 150 APT10M25BVR 400 100 C, CAPACITANCE (pF) ID , DRAIN CURRENT (AMPERES) 100µS OPERATION HERE LIMITED BY R DS (ON) 1mS 50 10mS 10 5 100mS TC =+25°C TJ =+150°C SINGLE PULSE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Ciss Ciss 5,000 Coss Crss 1,000 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE ID = ID [Cont.] VDS =20V VDS =50V 12 VDS=80V 8 4 0 10,000 100 1 5 10 50 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 Coss DC 1 20 15,000 0 50 100 150 200 250 300 Qg , TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 50 TJ =+150°C T J =+25°C 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-5513 Rev A 2.21 (.087) 2.59 (.102) Gate Drain Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058