APT1201R2BFLLG

APT1201R2BFLL(G) APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID SFLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT1201R2BFLL_SFLL UNIT 1200 Volts Drain-Source Voltage 12 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 403 Watts Linear Derating Factor 3.23 W/°C PD TJ,TSTG 48 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 12 (Repetitive and Non-Repetitive) 1 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 6A) TYP MAX UNIT Volts 1.25 Ohms Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 2-2009 Characteristic / Test Conditions 050-7393 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT1201R2BFLL_ SFLL Test Conditions Characteristic C iss Input Capacitance Coss Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge 3 Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time ID = 12A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 600V Turn-off Delay Time tf ID = 12A @ 25°C Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 465 VDD = 800V, VGS = 15V 100 ID = 12A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 21 RG = 1.6Ω INDUCTIVE SWITCHING @ 25°C 6 UNIT pF 70 100 14 65 8 18 29 VDD = 600V Rise Time MAX 2540 365 VGS = 10V Gate-Source Charge td(off) TYP VGS = 0V Qgs tr MIN µJ 935 VDD = 800V, VGS = 15V ID = 12A, RG = 5Ω 135 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS TYP MAX 12 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN Characteristic / Test Conditions Peak Diode Recovery dt dv/ UNIT Amps (Body Diode) 48 (VGS = 0V, IS = -12A) 1.3 Volts 18 V/ns dt 5 t rr Reverse Recovery Time (IS = -12A, di/dt = 100A/µs) Tj = 25°C 210 Tj = 125°C 710 Q rr Reverse Recovery Charge (IS = -12A, di/dt = 100A/µs) Tj = 25°C 1.0 Tj = 125°C 3.6 IRRM Peak Recovery Current (IS = -12A, di/dt = 100A/µs) Tj = 25°C 10 Tj = 125°C 14 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.31 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.25 0.7 0.20 0.5 Note: 0.10 0.3 0.05 0.1 0.05 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 2-2009 050-7393 Rev C 0.9 0.15 t1 t2 0 10-5 SINGLE PULSE 10-4 °C/W 4 Starting Tj = +25°C, L = 18.06mH, RG = 25Ω, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ ID-12A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 0.0258 Power (watts) 0.107 0.177 0.00295F 0.0114F 0.174F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (°C) 20 TJ = -55°C 15 TJ = +25°C TJ = +125°C 5 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 10 8 6 4 2 25 10 5.5V 05 1.40 V NORMALIZED TO = 10V @ I = 6A GS D 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT V D GS 1.05 1.00 0.95 0.90 0.85 -50 1.2 = 6A = 10V 2.0 1.5 1.0 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 2-2009 I 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 0.0 6V 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 12 0 15 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7393 Rev C 0 6.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @