APT1201R5BVFRG

APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V ® TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • Avalanche Energy Rated • Lower Leakage • Popular TO-247 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1201R5BVFR_SVFR UNIT 1200 Volts Drain-Source Voltage 10 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 370 Watts Linear Derating Factor 2.96 W/°C PD TJ,TSTG 1 40 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 10 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 5A) TYP MAX UNIT Volts 1.500 Ohms Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 3-2004 Characteristic / Test Conditions 050-5843 Rev A Symbol DYNAMIC CHARACTERISTICS APT1201R5BVFR_SVFR Characteristic Symbol Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 3700 4440 Coss Output Capacitance VDS = 25V 320 450 Reverse Transfer Capacitance f = 1 MHz 150 225 VGS = 10V 190 285 VDD = 600V ID = 10A @ 25°C 16 90 24 135 VGS = 15V 12 24 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) 3 Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf Fall Time VDD = 600V 10 20 ID = 10A @ 25°C 50 75 RG = 1.6Ω 14 28 TYP MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 10 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 40 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID 10A) 1.3 Volts 18 V/ns dv/ Peak Diode Recovery dt dv/ dt 5 t rr Reverse Recovery Time (IS = -ID 10A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 430 Q rr Reverse Recovery Charge (IS = -ID 10A, di/dt = 100A/µs) Tj = 25°C 1.0 Tj = 125°C 2.5 IRRM Peak Recovery Current (IS = -ID 10A, di/dt = 100A/µs) Tj = 25°C 11 Tj = 125°C 17 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.34 40 1 Repetitive Rating: Pulse width limited by maximum junction UNIT °C/W 3 See MIL-STD-750 Method 3471 4 SStarting T = +25°C, L = 26mH, R = 25Ω, Peak I = 10A j G L 5 I ≤ I 10A, di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 1200V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5843 Rev A 3-2004 0.4 0.01 t1 t2 SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves VGS=5.5V, 6V, 7V, 10V &15V 5V 16 12 4.5V 8 4 4V 16 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @