APT12060LVFRG

APT12060B2VFR APT12060LVFR 1200V 20A 0.600Ω POWER MOS V ® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching TO-264 • Avalanche Energy Rated D FREDFET • Popular T-MAX™ or TO-264 Package • Lower Leakage G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT12060B2VFR_LVFR UNIT 1200 Volts Drain-Source Voltage 20 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 625 Watts Linear Derating Factor 5.00 W/°C PD TJ,TSTG 80 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 20 (Repetitive and Non-Repetitive) 1 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID= 10A) TYP MAX UNIT Volts 0.600 Ohms Zero Gate Voltage Drain Current (VDS = 1200, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA 4-2004 Characteristic / Test Conditions 050-5845 Rev A Symbol DYNAMIC CHARACTERISTICS APT12060B2VFR _ LVFR TYP MAX VGS = 0V 7545 9500 Output Capacitance VDS = 25V 650 980 Reverse Transfer Capacitance f = 1 MHz 350 490 VGS = 10V 431 650 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 34 210 41 320 VGS = 15V 13 26 Characteristic Symbol Ciss Test Conditions Input Capacitance Coss Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd 3 Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf MIN VDD = 0.5 VDSS 12 24 ID = ID [Cont.] @ 25°C 63 95 RG = 0.6Ω 12 25 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 20 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 80 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 18 V/ns dv/ dt Peak Diode Recovery dv/ dt 5 t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 320 Tj = 125°C 650 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 3 Tj = 125°C 9 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 15 Tj = 125°C 25 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.20 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 15mH, R j G = 25Ω, Peak IL = 20A UNIT °C/W 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 I ≤ I [Cont.], di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 200V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 0.05 D=0.5 0.2 0.1 0.01 0.05 Note: 0.005 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5845 Rev A 4-2004 0.2 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Graph Deleted APT12060B2VFR_LVFR 30 5V VGS =15 &10V 25 20 4.5V 15 10 4V 5 0 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 40 TJ = +125°C 30 TJ = +25°C 20 TJ = -55°C 10 0 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 20 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 16 14 12 10 8 6 4 2 25 GS 1.10 VGS=10V 1.05 VGS=20V 1.0 0.95 0.9 0 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 D V 2.5 D 1.15 1.2 I = 0.5 I [Cont.] D NORMALIZED TO = 10V @ 0.5 I [Cont.] -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE Downloaded from Elcodis.com electronic components distributor VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3.0 V 1.2 18 0 1.2 1.1 1.0 0.9 0.8 4-2004 50 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @