APT13GP120BDQ1G

APT13GP120BDQ1(G) 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 600V, 10A • Low Gate Charge • 50 kHz operation @ 600V, 16A • Ultrafast Tail Current shutoff • RBSOA Rated G C E C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT13GP120BDQ1(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 I C1 Continuous Collector Current @ TC = 25°C 41 I C2 Continuous Collector Current @ TC = 110°C 20 I CM RBSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 50 @ TC = 150°C Reverse Bias Safe Operating Area @ TJ = 150°C 50A @ 960V Total Power Dissipation Watts 250 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 4.5 6 3.3 3.9 Units 1200 (VCE = VGE, I C = 1mA, Tj = 25°C) 3 Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 3.0 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 500 2 Gate-Emitter Leakage Current (VGE = ±20V) 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA nA 5-2005 V(BR)CES MIN Rev B Characteristic / Test Conditions 050-7446 Symbol DYNAMIC CHARACTERISTICS Symbol APT13GP120BDQ1(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf f = 1 MHz 15 Gate Charge 7.5 VGE = 15V 55 TJ = 150°C, R G = 5Ω, VGE = 115 165 Inductive Switching (125°C) 9 VCC = 600V 12 VGE = 15V 70 RG = 5Ω 200 225 I C = 13A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 330 6 Current Fall Time ns 34 TJ = +25°C Turn-off Delay Time nC 28 RG = 5Ω Current Rise Time V A 12 I C = 13A Turn-on Delay Time pF 50 9 5 UNIT 26 VCC = 600V 4 MAX 8 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) 90 15V, L = 100µH,VCE = 960V Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 1145 I C = 13A Current Rise Time Eon2 TYP Capacitance VCE = 600V Turn-on Delay Time Turn-on Switching Energy MIN TJ = +125°C ns µJ 710 6 840 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) WT Package Weight MIN TYP MAX .50 1.18 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7446 Rev B 5-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 40 40 35 35 IC, COLLECTOR CURRENT (A) TJ = -55°C 20 15 TJ = 125°C 10 TJ = 25°C 5 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 20 TJ = -55°C 15 TJ = 25°C 10 TJ = 125°C 5 2 3 4 5 6 7 8 9 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 6 TJ = 25°C. 250µs PULSE TEST