APT150GT120JR

APT150GT120JR 1200V, 150A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E E C G Features S • Low Forward Voltage Drop • RBSOA and SCSOA Rated • Low Tail Current • High Frequency Switching to 50KHz • Integrated Gate Resistor • Ultra Low Leakage Current OT 22 7 "UL Recognized" IS OT OP ® file # E145592 Low EMI, High Reliability • RoHS Compliant Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. All Ratings: TC = 25°C unless otherwise specified. Maximum Ratings Symbol Parameter Ratings VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 170 IC2 Continuous Collector Current @ TC = 100°C 90 ICM SSOA PD TJ, TSTG Pulsed Collector Current Unit Volts Amps 450 1 Switching Safe Operating Area @ TJ = 150°C 450 Total Power Dissipation 830 Watts -55 to 150 °C Operating and Storage Junction Temperature Range Static Electrical Characteristics Typ Max 1200 - - Unit V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25°C) 4.5 5.5 6.5 Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 25°C) 2.7 3.2 3.7 Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 125°C) - 4.0 - Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 - - 150 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 - - TBD Gate-Emitter Leakage Current (VGE = ±20V) - - 900 nA 1.75 2 3.25 Ω VCE(ON) ICES IGES RG(int) Integrated Gate Resistor CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Volts μA C 3- 2012 Min 052-6291 Rev Symbol Characteristic / Test Conditions Dynamic Characteristics Symbol APT150GT120JR Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage VGE = 0V, VCE = 25V f = 1MHz Gate Charge Min Typ Max - 9300 - - 1400 - - 700 - - 10 - Qg Total Gate Charge VGE = 15V - 995 - Qge Gate-Emitter Charge VCE= 600V - 110 - Gate-Collector Charge IC = 150A - 595 - Qgc SSOA td(on) ··tr td(off) tf Switching Safe Operating Area Inductive Switching (25°C) - N/A - Turn-Off Delay Time VCC = 800V - 570 - Current Fall Time VGE = 15V - 70 - RG = 2.2Ω - TBD - TJ = +25°C - 24.3 - - 12.7 - - 80 - Inductive Switching (125°C) - 165 - VCC = 800V - 635 - VGE = 15V - 75 - IC = 150A - TBD - - 33.5 - - 14.8 - Current Rise Time 5 Eoff Turn-Off Switching Energy 6 td(on) Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Eon1 Turn-On Switching Energy Eon2 Turn-On Switching Energy 5 Turn-Off Switching Energy IC = 150A 4 6 RG = 2.2Ω TJ = 125°C Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions θJC WT nC A - Turn-On Switching Energy R V 450 80 Eon2 Eoff L = 100μH, VCE= 1200V - Turn-On Switching Energy tf TJ = 150°C, RG = 1.0Ω , VGE = 15V, Turn-On Delay Time Eon1 td(off) pF 7 4 tr Unit ns mJ ns mJ Min Typ Max Unit Junction to Case - - 0.15 °C/W Package Weight - 29.2 - gm - - 10 in·lbf - - 1.1 N·m 2500 - - Volts Torque Terminals and Mounting Screws. VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 052-6291 Rev C 3- 2012 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves APT150GT120JR 350 350 GE 17V = 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ= 25°C 250 TJ= 125°C 200 150 TJ= 150°C 100 50 0 200 150 TJ= -55°C TJ= 25°C 50 TJ= 125°C 0 0 2 4 12V 250 200 11V 150 100 10V 50 9V 8V 0 5 10 15 20 25 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250 100 13V 20 250μs PULSE TEST