APT15D120BG

APT15D120BG Datasheet Ultrafast Soft Recovery Rectifier Diode Final October 2018 Ultrafast Soft Recovery Rectifier Diode Contents 1 Revision History ............................................................................................................................ 1 1.1 Revision C ........................................................................................................................................... 1 1.2 Revision B ........................................................................................................................................... 1 1.3 Revision A ........................................................................................................................................... 1 2 Product Overview .......................................................................................................................... 2 2.1 Features .............................................................................................................................................. 2 2.2 Benefits ............................................................................................................................................... 2 2.3 Applications ........................................................................................................................................ 2 3 Electrical Specifications .................................................................................................................. 3 3.1 Absolute Maximum Ratings ................................................................................................................ 3 3.2 Electrical Performance ....................................................................................................................... 3 3.3 Dynamic Characteristics ..................................................................................................................... 4 3.4 Typical Performance Curves ............................................................................................................... 4 3.5 Reverse Recovery Overview ............................................................................................................... 7 4 Package Specification ..................................................................................................................... 8 4.1 Package Outline Drawing ................................................................................................................... 8 APT15D120BG Datasheet Revision C Ultrafast Soft Recovery Rectifier Diode 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision C Revision C was published in October 2018. The new template and format was applied. The following is a summary of the changes in revision C of this document. Product image was updated. Product features were updated. For information, see Product Overview (see page 2). The operating and storage temperature range was changed from 150 °C to 175 °C, see Absolute Maximum Ratings (see page 3). The lead thickness in the package outline drawing was updated. For more information, see Package Outline Drawing (see page 8). 1.2 Revision B Revision B was published in November 2009. RoHS (G) designation was added to the datasheet title. 1.3 Revision A Revision A was published in August 2004. It is the first publication of this document. APT15D120BG Datasheet Revision C 1 Ultrafast Soft Recovery Rectifier Diode 2 Product Overview This section outlines the product overview for the APT15D120BG device. 2.1 Features The following are key features of the APT15D120BG device. Ultrafast recovery times Soft recovery characteristics Low forward voltage Low leakage current RoHS compliant 2.2 Benefits The following are benefits of the APT15D120BG device. Low switching losses Low noise (EMI) switching Cooler operation Higher reliability systems Increased system power density 2.3 Applications The APT15D120BG device is designed for the following applications. Power factor correction (PFC) Anti-parallel diode Switchmode power supply Inverters Freewheeling diode Motor controllers Converters Inverters Snubber diode APT15D120BG Datasheet Revision C 2 Ultrafast Soft Recovery Rectifier Diode 3 Electrical Specifications This section shows the electrical specifications for the APT15D120BG device. 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the APT15D120BG device. All ratings: TC = 25 °C unless otherwise specified. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 1200 V VRRM Maximum peak repetitive reverse voltage VRWM Maximum working peak reverse voltage IF(AV) Maximum average forward current (TC = 98 °C, duty cycle = 0.5) 15 A IF(RMS) RMS forward current 24 IFSM Non-repetitive forward surge current (TJ = 45 °C, 8.3 ms) 110 TJ , TSTG Operating and storage temperature range –55 to 175 TL Lead temperature for 10 seconds 300 °C The following table shows the thermal and mechanical characteristics of the APT15D120BG device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic/Test Conditions Min Typ Max RθJC Junction-to-case thermal resistance 1.18 RθJA Junction-to-ambient thermal resistance 40 Wt Package weight Unit °C/W 0.22 oz 6.2 g Maximum mounting torque, 6-32 or M3 screw 3.2 10 lbf-in 1.1 N-m Electrical Performance The following table shows the static characteristics of the APT15D120BG device. Table 3 • Static Characteristics Symbol Characteristic VF Forward voltage IRM Maximum reverse leakage current Cj Junction capacitance Test Conditions Min Typ Max IF = 15 A 2.0 2.5 IF = 30 A 2.3 IF = 15 A, TJ = 125 °C 1.8 V VR = VR rated 250 VR = VR rated, TJ = 125 °C 500 VR = 200 V APT15D120BG Datasheet Revision C 17 Unit µA pF 3 Ultrafast Soft Recovery Rectifier Diode 3.3 Dynamic Characteristics The following table shows the dynamic characteristics of the APT15D120BG device. Table 4 • Dynamic Characteristics 3.4 Symbol Characteristic Test Conditions Min Typ Max Unit trr Reverse recovery time IF = 1 A diF/dt = –100 A/µs VR = 30 V TJ = 25 °C 32 ns trr Reverse recovery time 260 ns Qrr Reverse recovery charge 480 nC IRRM Maximum reverse recovery current IF = 15 A diF/dt = –200 A/µs VR = 800 V TC = 25 °C 4 A trr Reverse recovery time 370 ns Qrr Reverse recovery charge 1300 nC IRRM Maximum reverse recovery current IF = 15A diF/dt = –200 A/µs VR = 800 V TC = 125 °C 9 A trr Reverse recovery time 140 ns Qrr Reverse recovery charge 2000 nC IRRM Maximum reverse recovery current IF = 15 A diF/dt = –1000 A/µs VR = 800 V TC = 125 °C 28 A Typical Performance Curves This section shows the typical performance curves for the APT15D120BG device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Anode-to-Cathode Figure 3 • Reverse Recovery Time vs. Current Rate of APT15D120BG Datasheet Revision C 4 Ultrafast Soft Recovery Rectifier Diode Figure 2 • Forward Current vs. Anode-to-Cathode Figure 3 • Reverse Recovery Time vs. Current Rate of Voltage (V) Change Figure 4 • Reverse Recovery Charge vs. Current Rate of Figure 5 • Reverse Recovery Current vs. Current Rate of Change Change Figure 6 • Dynamic Parameters vs. Junction Figure 7 • Maximum Average Forward Current vs. Case APT15D120BG Datasheet Revision C 5 Ultrafast Soft Recovery Rectifier Diode Figure 6 • Dynamic Parameters vs. Junction Figure 7 • Maximum Average Forward Current vs. Case Temperature Temperature Figure 8 • Junction Capacitance vs. Reverse Voltage APT15D120BG Datasheet Revision C 6 Ultrafast Soft Recovery Rectifier Diode 3.5 Reverse Recovery Overview The following illustration shows the diode test circuit for the APT15D120BG device. Figure 9 • Diode Test Circuit The following illustration shows the diode reverse recovery waveform and definitions for the APT15D120BG device. Figure 10 • Diode Reverse Recovery Waveform and Definitions 1. 2. 3. 4. IF—Forward conduction current diF/dt—Rate of diode current change through zero crossing IRRM—Maximum reverse recovery current trr—Reverse recovery time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through I RRM and 0.25•IRRM passes through zero 5. Qrr—Area under the curve defined by IRRM and trr APT15D120BG Datasheet Revision C 7 Ultrafast Soft Recovery Rectifier Diode 4 Package Specification This section outlines the package specification for the APT15D120BG device. 4.1 Package Outline Drawing The following figure shows the package outline drawing of the APT15D120BG device. Dimensions are in millimeters and (inches). Figure 11 • Package Outline Drawing APT15D120BG Datasheet Revision C 8 Ultrafast Soft Recovery Rectifier Diode Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2018 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. 053-0023 APT15D120BG Datasheet Revision C 9