APT15GP60BG

APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 19A • Low Gate Charge • 200 kHz operation @ 400V, 12A • Ultrafast Tail Current shutoff • SSOA rated C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT15GP60B_S VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 VGEM I C1 Continuous Collector Current @ TC = 25°C 56 I C2 Continuous Collector Current @ TC = 110°C 27 I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 1 UNIT Volts Amps 65 @ TC = 25°C 65A @ 600V Switching Safe Operating Area @ TJ = 150°C 250 Total Power Dissipation Watts -55 to 150 Operating and Storage Junction Temperature Range °C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) 2.1 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 250 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA 5-2006 MIN Rev C Characteristic / Test Conditions 050-7413 Symbol 1 APT15GP60B_S DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions 1685 VGE = 0V, VCE = 25V 210 Reverse Transfer Capacitance f = 1 MHz 15 Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V 7.5 VCE = 300V 12 15 Input Capacitance Coes Output Capacitance Cres VGEP Qge TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge I C = 15A SSOA Switching Safe Operating Area TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V 55 nC 65 A 15V, L = 100µH,VCE = 600V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time I C = 15A Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon1 Eon2 Eoff 8 12 VGE = 15V 69 I C = 15A Current Fall Time 55 ns 88 R G = 5Ω 44 Turn-on Switching Energy (Diode) µJ 121 Inductive Switching (125°C) VCC = 400V Turn-off Delay Time Turn-off Switching Energy 152 6 Current Rise Time Turn-on Switching Energy 130 TJ = +25°C 5 ns 58 R G = 5Ω 4 Eon2 tf 29 Current Fall Time Turn-on Switching Energy td(off) 12 VGE = 15V Turn-off Delay Time Eon1 tr 8 Inductive Switching (25°C) VCC = 400V 130 TJ = +125°C 267 66 µJ 268 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .50 RΘJC Junction to Case (DIODE) N/A Package Weight 5.90 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7413 Rev C 5-2006 Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES TC=25°C 10 0 TC=-55°C TC=125°C 5 FIGURE 1, Output Characteristics(VGE = 15V) 100 40 TJ = 25°C 20 TJ = 125°C 3.5 TJ = 25°C. 250µs PULSE TEST