APT15GP90BDQ1G

APT15GP90BDQ1(G) 900V TYPICAL PERFORMANCE CURVES APT15GP90BDQ1 APT15GP90BDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss G C • SSOA Rated E • Low Gate Charge C • Ultrafast Tail Current shutoff G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT15GP90BDQ1(G) VCES Collector-Emitter Voltage 900 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 43 I C2 Continuous Collector Current @ TC = 110°C 21 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 60 Switching Safe Operating Area @ TJ = 150°C 60A @ 900V Total Power Dissipation 250 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) 900 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) 3.2 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) 2.7 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25°C) 3 2 Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125°C) 350 2 Gate-Emitter Leakage Current (VGE = ±20V) 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units Volts µA nA 2-2006 MIN Rev A Characteristic / Test Conditions 050-7497 Symbol APT15GP90BDQ1(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf f = 1 MHz 32 Gate Charge 7.5 VGE = 15V 60 15V, L = 100µH,VCE = 900V TBD 200 Inductive Switching (125°C) 9 VCC = 600V 14 VGE = 15V 70 RG = 4.3Ω 100 TBD I C = 15A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 430 6 Current Fall Time ns 55 TJ = +25°C Turn-off Delay Time nC 33 I C = 15A Current Rise Time V A 14 RG = 4.3Ω Turn-on Delay Time pF 60 9 5 UNIT 27 VCC = 600V 4 MAX 10 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) 120 TJ = 150°C, R G = 4.3Ω, VGE = Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 1100 I C = 15A Current Rise Time Eon2 TYP Capacitance VCE = 450V Turn-on Delay Time Turn-on Switching Energy MIN TJ = +125°C ns µJ 790 6 500 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) WT Package Weight MIN TYP MAX .50 1.18 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7497 Rev A 2-2006 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V GE IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 50 TJ = 25°C 40 30 TJ = 125°C 20 10 0 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 TJ = -55°C 30 TJ = 25°C 20 TJ = 125°C 10 0 0 30 TJ = 25°C 20 TJ = 125°C 10 FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST