APT15GT120BRDQ1G

TYPICAL PERFORMANCE CURVES 1200VAPT15GT120B_SRDQ1(G) APT15GT120BRDQ1 APT15GT120SRDQ1 APT15GT120BRDQ1G* APT15GT120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® (B) TO The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. -2 D 3 PA K 47 (S) C G • Low Forward Voltage Drop • High Freq. Switching to 50KHz • Low Tail Current • Ultra Low Leakage Current G C E E • RBSOA and SCSOA Rated Combi (IGBT and Diode) All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter APT15GT120B_SRDQ1(G) VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage I C1 Continuous Collector Current @ TC = 25°C 36 I C2 Continuous Collector Current @ TC = 110°C 18 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1200 UNIT Volts ±30 1 @ TC = 150°C Amps 45 Switching Safe Operating Area @ TJ = 150°C 45A @ 960V Total Power Dissipation Watts 250 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1mA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 4.5 5.5 6.5 2.5 3.0 3.6 Units 1200 (VCE = VGE, I C = 0.6mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 3.8 200 2 Gate-Emitter Leakage Current (VGE = ±20V) μA TBD 480 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Volts nA 6-2011 V(BR)CES MIN Rev E Characteristic / Test Conditions 052-6267 Symbol DYNAMIC CHARACTERISTICS Symbol APT15GT120B_SRDQ1(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 Eon1 100 f = 1 MHz 65 Gate Charge 10 VGE = 15V 105 VCE = 600V 10 I C = 15A 60 TJ = 150°C, R G = 5Ω, VGE = 11 Turn-off Delay Time VGE = 15V 85 I C = 15A Turn-on Switching Energy 10 Current Rise Time VCC = 800V 11 Turn-off Delay Time VGE = 15V 95 Turn-on Delay Time I C = 15A Current Fall Time Eoff Turn-off Switching Energy μJ 55 ns 42 RG = 5Ω 44 Turn-on Switching Energy (Diode) ns 260 Inductive Switching (125°C) Turn-on Switching Energy nC 800 6 Eon2 V 585 TJ = +25°C 5 pF 35 RG = 5Ω 4 UNIT A Current Rise Time Current Fall Time MAX 45 10 Turn-off Switching Energy tf VGE = 0V, VCE = 25V VCC = 800V Eoff td(off) 1250 Inductive Switching (25°C) Turn-on Switching Energy (Diode) tr TYP Capacitance 15V, L = 100μH,VCE = 960V Turn-on Delay Time Eon2 td(on) MIN 590 TJ = +125°C μJ 1440 6 340 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) WT MIN Package Weight TYP MAX .50 1.18 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6267 Rev E 6-2011 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 45 V GE = 15V IC, COLLECTOR CURRENT (A) TJ = -55°C 30 25 TJ = 25°C 20 15 TJ = 125°C 10 15V 14V 50 13V 40 12V 30 11V 20 10V 9V 10 5 8V 0 0 0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 35 30 25 20 TJ = -55°C 15 TJ = 25°C 10 TJ = 125°C 5 0 0 J VCE = 240V 12 VCE = 600V 10 VCE = 960V 8 6 4 2 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 15A C T = 25°C 14 0 20 TJ = 25°C. 250μs PULSE TEST