APT15GT120BRG

APT15GT120BR APT15GT120BR(G) TYPICAL PERFORMANCE CURVES APT15GT120BR_SR(G) APT15GT120SR APT15GT120SR(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® (B) TO The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 50KHz • Low Tail Current • Ultra Low Leakage Current -2 D 3 PA K 47 (S) C G G C E E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT15GT120BR_SR(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 36 I C2 Continuous Collector Current @ TC = 110°C 18 I CM SSOA PD Pulsed Collector Current 1 @ TC = 150°C TL Volts Amps 45 Switching Safe Operating Area @ TJ = 150°C 45A @ 960V Total Power Dissipation TJ,TSTG UNIT Watts 250 Operating and Storage Junction Temperature Range -55 to 150 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1mA) 1200 VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 0.6mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) VCE(ON) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) I CES Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) MAX 4.5 5.5 6.5 2.5 3.0 3.6 100 2 Gate-Emitter Leakage Current (VGE = ±20V) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Units Volts 3.8 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES TYP μA TBD 480 nA 052-6266 Rev E 3-2012 Symbol DYNAMIC CHARACTERISTICS Symbol APT15GT120BR_SR(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Total Gate Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr td(off ) tf Eon1 Eon1 65 Gate Charge 10 VGE = 15V 105 VCE = 600V 10 I C = 15A 60 TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100μH,VCE = 960V 11 Turn-off Delay Time 85 I C = 15A 35 RG = 5Ω 585 Turn-on Switching Energy 4 TJ = +25°C 5 10 Current Rise Time VCC = 800V 11 Turn-off Delay Time VGE = 15V 95 I C = 15A 42 RG = 5Ω 590 Turn-on Delay Time Current Fall Time Turn-on Switching Energy 44 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy V nC ns μJ 260 Inductive Switching (125°C) Eon2 pF 800 6 UNIT A VGE = 15V Current Fall Time MAX 45 Current Rise Time Turn-off Switching Energy tf f = 1 MHz 10 Eoff td(off ) 100 VCC = 800V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V Inductive Switching (25°C) Eon2 td(on) 1250 Gate-Emitter Charge Gate-Collector ("Miller ") Charge TYP Capacitance 3 Qgc MIN 55 TJ = +125°C ns μJ 1440 6 340 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .50 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6266 Rev E 3-2012 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. UNIT °C/W gm TYPICAL PERFORMANCE CURVES APT15GT120BR_SR(G) 60 45 V GE 15V = 15V 14V 40 35 IC, COLLECTOR CURRENT (A) TJ = -55°C 30 25 TJ = 25°C 20 15 TJ = 125°C 10 13V 40 12V 30 11V 20 10V 9V 10 5 0 8V 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 7 0 FIGURE 1, Output Characteristics(TJ = 25°C) 45 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 35 30 25 20 TJ = -55°C 15 TJ = 25°C 10 TJ = 125°C 5 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 15A C T = 25°C J 14 VCE = 240V 12 VCE = 600V 10 VCE = 960V 8 6 4 2 0 14 0 20 FIGURE 3, Transfer Characteristics TJ = 25°C. 250μs PULSE TEST