APT17F120J
1200V, 18A, 0.58Ω Max, trr ≤330ns
N-Channel FREDFET
S
S
POWER MOS 8® is a high speed, high voltage N-channel switch-mode power MOSFET. This
'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability
in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high
recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss
result in excellent niose immunity and low switching loss. The intrinsic gate resistance and
capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in
low EMI and reliable paralleling, even when switching at very high frequency.
D
G
SO
2
T-
27
"UL Recognized"
file # E145592
ISOTOP ®
D
APT17F120J
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
18
Continuous Drain Current @ TC = 100°C
12
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
2165
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
14
A
1
104
Thermal and Mechanical Characteristics
Min
Characteristic
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
545
RθJC
Junction to Case Thermal Resistance
0.23
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
VIsolation
RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
WT
Torque
Package Weight
-55
150
Downloaded from Elcodis.com electronic components distributor
°C
V
2500
1.03
oz
29.2
g
10
in·lbf
1.1
N·m
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
°C/W
0.15
050-8167 Rev A 5-2009
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
ΔVBR(DSS)/ΔTJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
ΔVGS(th)/ΔTJ
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Symbol
VDS = 1200V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.41
0.55
4
-10
0.58
5
TJ = 25°C
VGS = 0V
250
1000
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Min
1200
VGS = 10V, ID = 14A
3
IDSS
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
APT17F120J
Min
Test Conditions
VDS = 50V, ID = 14A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Typ
31
9670
115
715
Max
Unit
S
pF
275
VGS = 0V, VDS = 0V to 800V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Current Rise Time
Turn-Off Delay Time
140
300
50
140
50
31
170
48
VGS = 0 to 10V, ID = 14A,
VDS = 600V
Resistive Switching
VDD = 800V, ID = 14A
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Max
18
A
G
104
S
ISD = 14A, TJ = 25°C, VGS = 0V
1.1
330
660
TJ = 25°C
TJ = 125°C
ISD = 14A 3
TJ = 25°C
diSD/dt = 100A/µs
TJ = 125°C
Unit
TJ = 25°C
TJ = 125°C
ISD ≤ 14A, di/dt ≤1000A/µs, VDD = 100V,
TJ = 125°C
1.72
4.67
11
16
V
ns
µC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 22.1mH, RG = 25Ω, IAS = 14A.
050-8167 Rev A 5-2009
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Downloaded from Elcodis.com electronic components distributor
APT17F120J
70
25
V
GS
= 10V
T = 125°C
J
V
GS
= 6, 7, 8 & 9V
20
TJ = -55°C
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
60
50
40
30
TJ = 25°C
20
15
5V
10
5
4.5V
TJ = 125°C
10
TJ = 150°C
0
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
0
Figure 2, Output Characteristics
100
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@
