APT20GT60BRDQ1G

TYPICAL PERFORMANCE CURVES APT20GT60BRDQ1(G) 600V APT20GT60BRDQ1 APT20GT60BRDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 150KHz • Low Tail Current • Ultra Low Leakage Current G C 47 E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT20GT60BRDQ1(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 43 I C2 Continuous Collector Current @ TC = 110°C 20 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 80 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C 80A @ 600V Total Power Dissipation Watts 174 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES (VCE = VGE, I C = 500µA, Tj = 25°C) 3 TYP 4 Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 25°C) 1.6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 125°C) 2.8 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) MAX 5 Volts 2.5 50 1000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units µA nA Rev C 6-2008 Characteristic / Test Conditions 052-6265 Symbol DYNAMIC CHARACTERISTICS Symbol APT20GT60BRDQ1(G) Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr Current Rise Time td(off) Turn-off Delay Time tf Eon1 Capacitance 1100 VGE = 0V, VCE = 25V 107 f = 1 MHz 63 Gate Charge 7.5 VGE = 15V 100 VCE = 300V 7 I C = 20A 43 I C = 20A Current Fall Time Turn-on Switching Energy Turn-off Switching Energy td(on) Turn-on Delay Time tr Current Rise Time RG = 5Ω 4 Eoff TJ = +25°C 5 6 VGE = 15V Turn-off Delay Time I C = 20A Current Fall Time Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy RG = 5Ω 44 55 TJ = +125°C 6 UNIT pF V nC A 8 9 80 39 215 210 245 Inductive Switching (125°C) VCC = 400V Eon1 MAX TJ = 150°C, R G = 5Ω, VGE = 80 15V, L = 100µH,VCE = 600V VGE = 15V Turn-on Switching Energy (Diode) tf TYP Inductive Switching (25°C) VCC = 400V Eon2 td(off) MIN Test Conditions Characteristic ns µJ 8 9 100 60 215 375 395 TYP ns µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case (IGBT) .72 RθJC Junction to Case (DIODE) 5.9 1.35 WT Package Weight MAX UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 052-6265 Rev C 6-2008 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 60 50 TJ = 25°C 40 TJ = 125°C 30 20 10 FIGURE 1, Output Characteristics(TJ = 25°C) 9V 40 8V 7V 20 40 30 TJ = 25°C 20 TJ = 125°C 10 0 J VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 20A C T = 25°C 14 0 20 TJ = 25°C. 250µs PULSE TEST