APT20GT60BRG

TYPICAL PERFORMANCE CURVES APT20GT60BR(G) 600V APT20GT60BR APT20GT60BRG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 150KHz • Low Tail Current • Ultra Low Leakage Current G C 47 E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT20GT60BR(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 43 I C2 Continuous Collector Current @ TC = 110°C 20 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 80 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C 80A @ 600V Total Power Dissipation Watts 174 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES (VCE = VGE, I C = 500µA, Tj = 25°C) 3 TYP 4 Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 25°C) 1.6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 125°C) 2.8 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) MAX 5 Volts 2.5 25 1000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units µA nA 6-2008 MIN Rev E Characteristic / Test Conditions 052-6210 Symbol DYNAMIC CHARACTERISTICS Symbol APT20GT60BR(G) Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr Current Rise Time td(off) Turn-off Delay Time tf Eon1 Capacitance 1100 VGE = 0V, VCE = 25V 107 f = 1 MHz 63 Gate Charge 7.5 VGE = 15V 100 VCE = 300V 7 I C = 20A 43 I C = 20A Current Fall Time Turn-on Switching Energy Turn-off Switching Energy td(on) Turn-on Delay Time tr Current Rise Time RG = 5Ω 4 Eoff TJ = +25°C 5 6 VGE = 15V Turn-off Delay Time I C = 20A Current Fall Time Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy RG = 5Ω 44 55 TJ = +125°C 6 UNIT pF V nC A 8 9 80 39 215 210 245 Inductive Switching (125°C) VCC = 400V Eon1 MAX TJ = 150°C, R G = 5Ω, VGE = 80 15V, L = 100µH,VCE = 600V VGE = 15V Turn-on Switching Energy (Diode) tf TYP Inductive Switching (25°C) VCC = 400V Eon2 td(off) MIN Test Conditions Characteristic ns µJ 8 9 100 60 215 375 395 TYP ns µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case (IGBT) .72 RθJC Junction to Case (DIODE) 5.9 N/A WT Package Weight MAX UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 052-6210 Rev E 6-2008 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 60 50 TJ = 25°C 40 TJ = 125°C 30 20 10 FIGURE 1, Output Characteristics(TJ = 25°C) 9V 40 8V 7V 20 30 TJ = 25°C 20 TJ = 125°C 10 0 VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) J 0 20 TJ = 25°C. 250µs PULSE TEST