APT20M11JLL

APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol S S G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT20M11JLL UNIT 200 Volts Drain-Source Voltage 176 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.56 W/°C PD TJ,TSTG 1 704 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 176 (Repetitive and Non-Repetitive) 1 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 88A) TYP MAX Volts 0.011 Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7022 Rev D Symbol DYNAMIC CHARACTERISTICS APT20M11JLL Test Conditions Characteristic Symbol MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 4220 Crss Reverse Transfer Capacitance f = 1 MHz 90 VGS = 10V 180 VDD = 100V 80 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) ID = 176A @ 25°C td(off) tf 65 VDD = 100V RG = 0.6Ω Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 6 ns 55 ID = 176A @ 25°C Turn-off Delay Time nC 24 VGS = 15V Rise Time pF 65 RESISTIVE SWITCHING Turn-on Delay Time tr UNIT 10320 VGS = 0V 3 MAX 9 INDUCTIVE SWITCHING @ 25°C 1190 VDD = 133V, VGS = 15V ID = 176A, RG = 5Ω 2485 INDUCTIVE SWITCHING @ 125°C 1260 VDD = 133V, VGS = 15V ID = 176A, RG = 5Ω µJ 2815 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions IS TYP MAX 176 Continuous Source Current (Body Diode) UNIT Amps ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -176A, dl S /dt = 100A/µs) 460 ns Q rr Reverse Recovery Charge (IS = -176A, dl S /dt = 100A/µs) 7.0 µC dv/ Peak Diode Recovery dt dv/ 704 (Body Diode) (VGS = 0V, IS = -176A) dt 1.3 5 Volts 5 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 TYP 0.18 40 4 Starting Tj = +25°C, L = 0.23mH, RG = 25Ω, Peak IL = 176A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID176A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.9 0.15 0.7 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7022 Rev D 9-2004 0.20 0.10 0.3 0.05 t2 0.1 0 10-5 t1 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 10 Typical Performance Curves APT20M11JLL 300 VGS =15 &10V Junction temp. (°C) 0.0268 Power (watts) 0.109 0.0426 0.0456F 0.765F 23.5F ID, DRAIN CURRENT (AMPERES) RC MODEL 250 8V 200 7.5V 150 7V 100 6.5 50 6V Case temperature. (°C) 5.5V 0 250 200 TJ = +125°C 150 TJ = +25°C 100 TJ = -55°C 50 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 180 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 140 120 100 80 60 40 20 0 25 I V D D 1.20 1.10 VGS=10V 1.00 0.90 0.80 VGS=20V 0 50 100 150 200 250 300 350 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 88A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, RDS(ON) vs. TEMPERATURE Downloaded from Elcodis.com electronic components distributor VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 NORMALIZED TO = 10V @ I = 88A GS 1.30 1.15 160 0.0 -50 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 9-2004 300 VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @