APT20M120JCU3

APT20M120JCU3 ISOTOP® Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 560m typ @ Tj = 25°C ID = 20A @ Tc = 25°C Application  AC and DC motor control  Switched Mode Power Supplies D Features  G S  SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF A G    A S Power MOS 8™ MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits  Outstanding performance at high frequency operation  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Easy paralleling due to positive TC of VCEsat  RoHS Compliant D ISOTOP Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1200 20 15 104 ±30 672 543 14 Unit V A October, 2012 ID Parameter Drain - Source Breakdown Voltage V m W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APT20M120JCU3 – Rev 1 Symbol VDSS APT20M120JCU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Tj = 25°C VDS =1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = ±30 V Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min 3 Typ 560 4 Max 100 500 672 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 14A Td(on) Turn-on Delay Time Tr Td(off) Tf Min Turn-off Delay Time Fall Time pF 300 nC 50 140 50 Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 14A RG = 2.2 Rise Time Typ 7736 715 92 31 ns 170 48 SiC chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 32 56 10 1.6 2.3 200 1000 VF Diode Forward Voltage IF = 10A QC Total Capacitive Charge IF = 10A, VR = 600V di/dt =500A/µs 80 C Total Capacitance f = 1MHz, VR = 200V 96 f = 1MHz, VR = 400V 69 Unit V µA A 1.8 3 V nC pF Thermal and package characteristics RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com Typ 2500 -40 Max 0.23 1.65 20 Unit October, 2012 Min Mosfet SiC Diode °C/W V 150 300 1.5 29.2 °C N.m g 2-6 APT20M120JCU3 – Rev 1 Symbol Characteristic APT20M120JCU3 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) Drain Anode 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Dimensions in Millimeters and (Inches) Gate Typical Mosfet Performance Curve 0.9 0.2 0.7 0.15 0.5 0.05 0.3 Single P ulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) October, 2012 0.1 www.microsemi.com 3-6 APT20M120JCU3 – Rev 1 Thermal Impedance (°C/W) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 APT20M120JCU3 Low Voltage Output Characteristics ID, Drain Current (A) TJ=25°C 20 TJ=125°C 10 0 TJ=125°C 25 VGS=6, 7, 8 & 9V 20 15 5V 10 4.5V 5 0 0 5 10 15 20 0 5 VDS, Drain to Source Voltage (V) 20 25 30 Transfert Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 20 VGS=10V ID=14A ID, Drain Current (A) 2 1.5 1 0.5 0 16 TJ=125°C 12 8 TJ=25°C 4 0 25 50 75 100 125 150 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 10000 12 Ciss VDS=600V 8 6 VDS=960V 4 2 0 C, Capacitance (pF) VDS=240V ID=14A TJ=25°C 10 1000 Coss 100 Crss 10 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com October, 2012 RDSon, Drain to Source ON resistance Normalized RDS(on) vs. Temperature VGS, Gate to Source Voltage 15 VDS, Drain to Source Voltage (V) 3 2.5 10 4-6 APT20M120JCU3 – Rev 1 ID, Drain Current (A) VGS=10V 30 Low Voltage Output Characteristics 30 40 APT20M120JCU3 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.8 0.9 1.6 1.4 0.7 1.2 1 0.5 0.8 0.3 0.6 0.4 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 20 100 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 16 TJ=75°C 12 TJ=125°C 8 4 TJ=175°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 75 50 TJ=75°C TJ=125°C 25 TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 700 600 500 400 300 200 100 0 1000 October, 2012 10 100 VR Reverse Voltage ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 5-6 APT20M120JCU3 – Rev 1 1 APT20M120JCU3 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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