APT20M16LFLLG

APT20M16B2FLL APT20M16LFLL 200V 100A 0.016Ω POWER MOS 7 R FREDFET B2FLL ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID TO-264 LFLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol T-MAX™ D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT20M16B2FLL_LFLL UNIT 200 Volts Drain-Source Voltage Continuous Drain Current 7 100 @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.56 W/°C PD TJ,TSTG 400 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 100 (Repetitive and Non-Repetitive) 1 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 50A) TYP MAX UNIT Volts 0.016 Ohms Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 5-2004 Characteristic / Test Conditions 050-7044 Rev C Symbol APT20M16 B2FLL_LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 100V tf ID = 100A @ 25°C RG = 0.6Ω 4 INDUCTIVE SWITCHING @ 25°C 850 Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VDD = 133V, VGS = 15V 6 nC ns 930 ID = 100A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C µJ 935 VDD = 133V, VGS = 15V ID = 100A, RG = 5Ω UNIT pF 145 140 65 120 15 31 29 ID = 100A @ 25°C Turn-off Delay Time MAX 7220 2330 VDD = 100V Rise Time td(off) TYP VGS = 10V Qgs tr MIN Test Conditions Ciss 985 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP 100 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 400 Diode Forward Voltage 2 (VGS = 0V, IS = -100A) 1.3 Volts 8 V/ns Peak Diode Recovery dt MAX dv/ dt 5 t rr Reverse Recovery Time (IS = -100A, di/dt = 100A/µs) Tj = 25°C 230 Tj = 125°C 450 Q rr Reverse Recovery Charge (IS = -100A, di/dt = 100A/µs) Tj = 25°C 0.9 Tj = 125°C 3.4 IRRM Peak Recovery Current (IS = -100A, di/dt = 100A/µs) Tj = 25°C 11 Tj = 125°C 20 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.18 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.7 0.12 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 5-2004 050-7044 Rev C 0.9 0.08 0.3 t2 0.1 0.05 0 10-5 t1 Duty Factor D = t1/t2 0.04 SINGLE PULSE 10-4 °C/W 4 Starting Tj = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID100A di/dt ≤ 700A/µs VR ≤ 200V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 The maximum current is limited by lead temperature APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 0.16 UNIT Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT20M16B2FLL_LFLL 300 VGS=15V Junction temp. (°C) 0.0271 Power (watts) 0.0656 0.0859 0.00899F 0.0210F 0.293F ID, DRAIN CURRENT (AMPERES) RC MODEL 10V 250 9V 200 8.5V 150 8V 100 7.5V 7V 50 6.5V Case temperature. (°C) 0 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @