APT20M20JFLL

APT20M20JFLL 200V 104A 0.020Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 27 2 T- D G ® • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg S S FREDFET D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT20M20JFLL UNIT Drain-Source Voltage 200 Volts ID Continuous Drain Current @ TC = 25°C 104 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 463 Watts Linear Derating Factor 3.70 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 416 -55 to 150 °C 300 Amps 100 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 52A) TYP MAX UNIT Volts 0.020 Ohms Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 4-2004 Characteristic / Test Conditions 050-7045 Rev D Symbol APT20M20JFLL DYNAMIC CHARACTERISTICS Symbol Ciss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge 3 Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time td(off) tf TYP ID = 104A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 100V Turn-off Delay Time ID = 104A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 465 VDD = 130V, VGS = 15V 455 ID = 104A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 2 RG = 0.6Ω Eon UNIT pF 95 110 43 47 13 40 26 VDD = 100V Rise Time MAX 6850 2180 VGS = 10V Qgs tr MIN µJ 920 VDD = 130V, VGS = 15V ID = 104A, RG = 5Ω 915 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions MIN TYP MAX 104 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 416 Diode Forward Voltage 2 (VGS = 0V, IS = -104A) 1.3 Volts 8 V/ns Peak Diode Recovery dv/ dt 5 t rr Reverse Recovery Time (IS = -104A, di/dt = 100A/µs) Tj = 25°C 220 Tj = 125°C 420 Q rr Reverse Recovery Charge (IS = -104A, di/dt = 100A/µs) Tj = 25°C 1.07 Tj = 125°C 2.9 IRRM Peak Recovery Current (IS = -104A, di/dt = 100A/µs) Tj = 25°C 12.1 Tj = 125°C 20.6 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 4-2004 050-7045 Rev D 0.9 t2 0.1 10-5 t1 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 SINGLE PULSE 10-4 °C/W 4 Starting Tj = +25°C, L = 0.46mH, RG = 25Ω, Peak IL = 104A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID104A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.30 0.25 UNIT 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT20M20JFLL 250 0.0409 Power (Watts) 0.225 0.00361 0.0246F 0.406F 0.147.639F Case temperature ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( ”C) VGS =15 &10V 9V 200 7.5V 150 7V 100 6.5 6V 50 5.5V 0 200 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @