APT20M34SLLG/TR

APT20M34BLL APT20M34SLL 200V 74A 0.034Ω POWER MOS 7 R MOSFET BLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS SLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT20M34BLL_SLL UNIT 200 Volts Drain-Source Voltage ID Continuous Drain Current @ TC = 25°C IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 403 Watts Linear Derating Factor 3.23 W/°C PD TJ,TSTG 1 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy 1 Amps 296 TL EAS 74 -55 to 150 °C 300 Amps 74 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 37A) TYP MAX Volts 0.034 Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7008 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT20M34BLL_SLL Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 1170 Reverse Transfer Capacitance f = 1 MHz 60 VGS = 10V 60 VDD = 100V 23 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 74A @ 25°C tr td(off) tf 27 VDD = 100V RG = 0.6Ω Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 6 ns 25 ID = 74A @ 25°C Turn-off Delay Time nC 10 VGS = 15V Rise Time pF 26 RESISTIVE SWITCHING Turn-on Delay Time UNIT 3660 VGS = 0V 3 MAX 4 INDUCTIVE SWITCHING @ 25°C 505 VDD = 133V, VGS = 15V ID = 74A, RG = 5Ω 395 INDUCTIVE SWITCHING @ 125°C 640 VDD = 133V VGS = 15V µJ 425 ID = 74A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP 74 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -74A, dl S/dt = 100A/µs) 160 Q Reverse Recovery Charge (IS = -74A, dl S/dt = 100A/µs) 1.3 rr dv/ dt Peak Diode Recovery dv/ 296 (Body Diode) (VGS = 0V, IS = -74A) dt MAX 1.3 5 UNIT Amps Volts ns µC 5 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol MIN Characteristic RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 TYP 0.31 40 4 Starting Tj = +25°C, L = 0.470mH, RG = 25Ω, Peak IL = 74A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID74A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 0.15 0.3 0.10 t1 t2 Duty Factor D = t1/t2 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7008 Rev B 9-2004 0.35 0.30 0.1 0.05 10-5 °C/W Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT20M34BLL_SLL RC MODEL Junction temp. (°C) 0.131 0.00789F Power (watts) 0.180 0.161F ID, DRAIN CURRENT (AMPERES) 160 VGS=10 &15V 140 6.5V 120 6V 100 80 5.5V 60 5V 40 4.5V 20 4V Case temperature. (°C) 0 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @