APT22F120L

APT22F120B2 APT22F120L 1200V, 23A, 0.70Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Ma x TM TO-264 APT22F120B2 APT22F120L D Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol Parameter ID Unit Ratings Continuous Drain Current @ TC = 25°C 23 Continuous Drain Current @ TC = 100°C 15 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1875 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 12 A 1 90 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RθJC Junction to Case Thermal Resistance 0.12 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m Rev D 8-2011 Min Characteristic 050-8081 Symbol Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ Parameter Test Conditions Min Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 1200 Drain-Source On Resistance 3 VGS(th) Gate-Source Threshold Voltage VGS = 10V, ID = 12A Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 1200V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance APT22F120B2_L Typ Max 1.41 0.53 4 -10 0.70 5 TJ = 25°C VGS = 0V 250 1000 ±100 TJ = 125°C VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) ∆VGS(th)/∆TJ TJ = 25°C unless otherwise specified Min Test Conditions VDS = 50V, ID = 12A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 27 8370 100 615 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 240 VGS = 0V, VDS = 0V to 800V 125 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 800V, ID = 12A tr td(off) tf Turn-Off Delay Time 260 42 120 45 27 145 42 VGS = 0 to 10V, ID = 12A, VDS = 600V RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Max 23 A G 90 S ISD = 12A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 12A 3 TJ = 25°C diSD/dt = 100A/μs TJ = 125°C Unit TJ = 25°C TJ = 125°C ISD ≤ 12A, di/dt ≤1000A/μs, VDD = 800V, TJ = 125°C 375 720 2.2 5.8 12.3 16.5 1.1 425 850 V ns μC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 26.04mH, RG = 25Ω, IAS = 12A. 050-8081 Rev D 8-2011 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.80E-7/VDS^2 + 4.62E-8/VDS + 6.57E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT22F120B2_L 60 V GS 20 = 10V T = 125°C J 16 TJ = -55°C ID, DRIAN CURRENT (A) 40 30 TJ = 25°C 20 10 GS 12 5V 8 4 4.5V TJ = 125°C TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 2, Output Characteristics 90 NORMALIZED TO 2.5 2.0 1.5 1.0 0.5 70 60 TJ = -55°C 50 TJ = 25°C 40 TJ = 125°C 30 20 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 Ciss 10,000 30 C, CAPACITANCE (pF) TJ = -55°C 25 TJ = 25°C 20 TJ = 125°C 15 10 1000 Coss 100 5 0 Crss 0 16 2 4 6 8 10 12 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 200 400 600 800 1000 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 240V 10 VDS = 600V 8 6 VDS = 960V 4 2 0 0 90 ID = 12A 14 0 10 14 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE 250μSEC. PULSE TEST @ ID(ON) x RDS(ON) MAX. 80 VGS = 10V @ 12A ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 80 70 60 50 40 TJ = 25°C 30 TJ = 150°C 20 10 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev D 8-2011 0 = 6, 7, 8 & 9V V 050-8081 ID, DRAIN CURRENT (A) 50 200 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) APT22F120B2_L 200 10 13μs 100μs 1ms 1 10ms Rds(on) 0.1 Rds(on) 10 13μs 100μs 1ms TJ = 150°C TC = 25°C 1 DC line 0.1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 10ms Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25°C)*(TJ - TC)/125 C DC line 100ms TJ = 125°C TC = 75°C 1 IDM 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.12 D = 0.9 0.10 0.7 0.08 Note: 0.5 0.06 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t2 t1 = Pulse Duration SINGLE PULSE 0.02 0 t1 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration T-MAX® (B2) Package Outline 1.0 TO-264 (L) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drai n Drai n 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 050-8081 Rev D 8-2011 0.40 (.016) 1.016(.040) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drai n 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Gate Drain Source Source 2.21 (.087) 2.59 (.102) 2.29 (.090) 2.69 (.106) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches)