APT25GN120BG

TYPICAL PERFORMANCE CURVES ® 1200V APT25GN120B_S(G) APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 D3PAK 47 (S) C G G C E E • 1200V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Integrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT25GN120B(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 67 I C2 Continuous Collector Current @ TC = 110°C 33 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 75 Switching Safe Operating Area @ TJ = 150°C 75A @ 1200V Total Power Dissipation 272 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 150µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) MAX 5 5.8 6.5 1.4 1.7 2.1 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 1.9 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) 100 2 600 8 Integrated Gate Resistor CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Downloaded from Elcodis.com electronic components distributor Units 1200 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP nA Ω 11-2005 V(BR)CES MIN Rev D Characteristic / Test Conditions 050-7600 Symbol APT25GN120B_S(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge td(on) tr td(off) tf Eon1 Eon2 tr td(off) tf A ns TBD mJ 1490 2150 Inductive Switching (125°C) 22 VCC = 800V 17 VGE = 15V 335 RG = 1.0Ω 7 225 TBD I C = 150A Current Fall Time 44 Turn-on Switching Energy (Diode) nC 135 TJ = +25°C Turn-off Delay Time Turn-on Switching Energy V 280 6 Eon2 pF 75 RG = 1.0Ω 7 5 UNIT 85 17 4 MAX 10 VCC = 800V Current Rise Time Turn-off Switching Energy 155 I C = 150A Eon1 Eoff 9.5 VGE = 15V VGE = 15V Turn-on Switching Energy (Diode) Turn-on Delay Time Gate Charge 22 Current Fall Time td(on) 85 Inductive Switching (25°C) Turn-off Delay Time Turn-off Switching Energy 105 f = 1 MHz 15V, L = 100µH,VCE = 1200V Current Rise Time Eoff VGE = 0V, VCE = 25V TJ = 150°C, R G = 4.3Ω 7, VGE = Turn-on Delay Time Turn-on Switching Energy 1800 I C = 150A Switching Safe Operating Area TYP Capacitance VCE = 600V Qge SSOA MIN 55 TJ = +125°C ns mJ 2390 66 3075 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .46 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7600 Rev D 11-2005 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) Downloaded from Elcodis.com electronic components distributor TYPICAL PERFORMANCE CURVES 15V IC, COLLECTOR CURRENT (A) 40 10V 30 9V 20 8V 10 7V 0 FIGURE 1, Output Characteristics(TJ = 25°C) 60 TJ = 125°C 45 TJ = 25°C 30 TJ = -55°C 15 0 0 10V 30 9V 20 8V 10 7V 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250µs PULSE TEST