APT25GP120BG

APT25GP120B 1200V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET. • Low Conduction Loss • 100 kHz operation @ 800V,11A • Low Gate Charge • 50 kHz operation @ 800V, 19A • Ultrafast Tail Current shutoff • RBSOA Rated MAXIMUM RATINGS Symbol TO-247 G C E C G E All Ratings: TC = 25°C unless otherwise specified. Parameter APT25GP120B VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 VGEM I C1 Continuous Collector Current @ TC = 25°C 69 I C2 Continuous Collector Current @ TC = 110°C 33 I CM Pulsed Collector Current RBSOA PD TJ,TSTG TL 1 UNIT Volts Amps 90 @ TC = 25°C 90A @ 960V Reverse Bias Safe Operating Area @ TJ = 150°C Watts 417 Total Power Dissipation -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) 3.3 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) 3.0 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 250 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA 4-2003 MIN Rev B Characteristic / Test Conditions 050-7411 Symbol APT25GP120B DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP Cies IInput Capacitance Capacitance 2090 Coes Output Capacitance VGE = 0V, VCE = 25V 200 Cres Reverse Transfer Capacitance f = 1 MHz 40 VGEP Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V 7.5 110 VCE = 600V 15 I C = 25A 50 Qg Qge Qgc RBSOA Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V nC 90 A 15V, L = 100µH,VCE = 960V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon1 Eon2 Eoff 70 I C = 25A 39 µJ 438 Inductive Switching (125°C) VCLAMP(Peak) = 600V 12 VGE = 15V 109 I C = 25A 88 Turn-off Delay Time Current Fall Time Turn-off Switching Energy 1092 6 14 R G = 5Ω 4 Turn-on Switching Energy (Diode) ns 500 TJ = +25°C 5 Current Rise Time Turn-on Switching Energy 14 R G = 5Ω 4 Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 12 Turn-off Delay Time Eon1 tr Inductive Switching (25°C) VCLAMP(Peak) = 600V 5 ns 500 TJ = +125°C 1577 6 µJ 1187 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .30 RΘJC Junction to Case (DIODE) N/A Package Weight 5.90 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7411 Rev B 4-2003 APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT25GP120B 60 VGE = 15V. 250µs PULSE TEST