APT25GR120B

APT25GR120B_S APT25GR120B APT25GR120S 1200V, 25A, Vce(on) = 2.5V Typical Ultra Fast NPT - IGBT® (B) TO The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses. -2 D 3 PA K 47 (S) C G Features G • Low Saturation Voltage • Short Circuit Withstand Rated • Low Tail Current • High Frequency Switching • RoHS Compliant • Ultra Low Leakage Current C E E Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 75 I C2 Continuous Collector Current @ TC = 125°C 25 I CM Pulsed Collector Current 100 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 μs Total Power Dissipation @ TC = 25°C 521 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500μA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 5.0 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) 3.3 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) 3.5 (VCE = VGE, I C = 1.0mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 3.5 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES 5 2 2 Unit Volts 500 μA ±250 nA 50 Gate-Emitter Leakage Current (VGE = ±20V) Microsemi Website - http://www.microsemi.com 052-6408 Rev A 1-2013 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Gate-Emitter Charge Qgc Gate- Collector Charge td(off) tf Capacitance 2784 VGE = 0V, VCE = 25V 271 Max 75 V 154 203 20 27 IC = 25A 76 97 VCE= 600V Inductive Switching (25°C) 16 Current Rise Time VCC = 600V 10 Turn-Off Delay Time VGE = 15V 122 20 IC = 25A Turn-On Switching Energy RG = 4.3 Ω 742 1110 Turn-Off Switching Energy TJ = +25°C 427 640 td(on) Turn-On Delay Time tr td(off) Eon2 4 Inductive Switching (125°C) 16 Current Rise Time VCC = 600V 10 Turn-Off Delay Time VGE = 15V 136 Current Fall Time tf nC ns Eoff 6 5 Unit pF 7.5 Gate Charge Current Fall Time Eon2 Typ f = 1MHz Turn-On Delay Time tr Min VGE = 15V Qge td(on) APT25GR120B_S μJ ns 28 IC = 25A 5 Turn-On Switching Energy RG = 4.3 Ω Eoff 6 Turn-Off Switching Energy TJ = +125°C 4 1297 1945 480 720 μJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max RθJC Junction to Case Thermal Resistance .24 RθJA Junction to Ambient Thermal Resistance 40 WT Package Weight Torque .22 Unit °C/W oz 6.2 g Mounting Torque (TO-247 Package), 4-40 or M3 screw 10 in-lbf 6.2 N∙m 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6408 D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 P DM ZθJC, THERMAL IMPEDANCE (°C/W) Rev A 1-2013 0.25 0.3 t1 t2 0.05 t 0.1 0.05 SINGLE PULSE Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0 10-5 10-4 10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1 TYPICAL PERFORMANCE CURVES APT25GR120B_S 350 200 V GE = 15V IC, COLLECTOR CURRENT (A) 300 200 150 100 50 30 40 50 IC(A) FIGURE 2, Max Frequency vs Current (Tcase = 75°C) 180 15V 13V 160 IC, COLLECTOR CURRENT (A) 0 10 9V 120 8.5V 100 8.0V 80 7.5V 60 7V 40 6.5V 20 0 200 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 4, Output Characteristics (TJ = 25°C) IC, COLLECTOR CURRENT (A) 250μs PULSE TEST