APT25GT120BRDQ2G

TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2(G) 1200V APT25GT120BRDQ2 APT25GT120BRDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 4 7 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 50KHz • Low Tail Current • Ultra Low Leakage Current G C E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT25GT120BRDQ2(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 54 I C2 Continuous Collector Current @ TC = 110°C 25 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 75 Switching Safe Operating Area @ TJ = 150°C 75A @ 1200V Total Power Dissipation Watts 347 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA) 1200 VGE(TH) Gate Threshold Voltage 4.5 5.5 6.5 2.7 3.2 3.7 3.9 VCE(ON) I CES I GES (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) TYP MAX 200 TBD 120 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units Volts µA nA Rev C 6-2008 Characteristic / Test Conditions 052-6269 Symbol DYNAMIC CHARACTERISTICS Symbol APT25GT120BRDQ2(G) Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr Current Rise Time td(off) Turn-off Delay Time tf Eon1 Capacitance 1650 VGE = 0V, VCE = 25V 250 f = 1 MHz 110 Gate Charge 10.0 VGE = 15V 170 VCE = 600V 20 100 I C = 25A I C = 25A Current Fall Time Turn-on Switching Energy Turn-off Switching Energy td(on) Turn-on Delay Time tr Current Rise Time RG = 5Ω 4 Eoff TJ = +25°C 5 6 VGE = 15V Turn-off Delay Time I C = 25A Current Fall Time Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy RG = 5Ω 44 55 TJ = +125°C 6 UNIT pF V nC A 14 27 150 36 930 1860 720 Inductive Switching (125°C) VCC = 800V Eon1 MAX TJ = 150°C, R G = 5Ω, VGE = 75 15V, L = 100µH,VCE = 1200V VGE = 15V Turn-on Switching Energy (Diode) tf TYP Inductive Switching (25°C) VCC = 800V Eon2 td(off) MIN Test Conditions Characteristic ns µJ 14 27 175 45 925 3265 965 TYP ns µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case (IGBT) .36 RθJC Junction to Case (DIODE) 5.9 .61 WT Package Weight MAX UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6269 Rev C 6-2008 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES GE = 15V 15V 60 TJ = 25°C 50 TJ = 125°C 40 TJ = -55°C 30 20 10 0 FIGURE 1, Output Characteristics(TJ = 25°C) 80 50 40 30 TJ = 25°C TJ = 125°C 10 0 0 9V 8V 7V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) I = 25A C T = 25°C J 14 VCE = 600V 10 VCE = 960V 8 6 4 2 0 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) IC = 50A 5 TJ = 25°C. 250µs PULSE TEST