APT2X100DQ120J

2 1 3 4 2 1 Anti-Paralle l APT2x100DQ120J 3 4 2 1 3 4 SO P aralle l APT2x101DQ120J 2 T- 27 "UL Recognized" file # E145592 IS OT OP ® APT2x101DQ120J 1200V APT2x100DQ120J 1200V 100A 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating • Low Leakage Current • High Speed Rectifiers • Avalanche Energy Rated -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode Density All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions APT2x101_100DQ120J UNIT 1200 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 50°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 127 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 1000 Operating and StorageTemperature Range 20 mJ -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage MIN TYP MAX IF = 100A 2.4 3.0 IF = 150A 2.65 IF = 100A, TJ = 125°C IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V UNIT Volts 1.8 VR = 1200V 100 VR = 1200V, TJ = 125°C 500 110 μA pF 053-4230 Rev D 5 -2011 Symbol DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM trr Qrr IRRM trr Qrr IRRM APT2x101_100DQ120J IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C IF = 100A, diF/dt = -200A/μs VR = 800V, TC = 25°C Maximum Reverse Recovery Current Reverse Recovery Time IF = 100A, diF/dt = -200A/μs Reverse Recovery Charge VR = 800V, TC = 125°C Maximum Reverse Recovery Current Reverse Recovery Time IF = 100A, diF/dt = -1000A/μs Reverse Recovery Charge VR = 800V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 45 - 385 - 1055 - 6 - 480 ns - 5240 nC - 19 - 210 ns - 9345 nC - 70 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RqJC VIsolation WT Torque MAX UNIT .41 °C/W Junction-to-Case Thermal Resistance Volts RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.40 0.35 0.7 0.30 0.25 0.5 Note: 0.20 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.45 0.3 0.15 t1 t2 0.10 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.05 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 0.1 1 053-4230 Rev D 5-2011 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 10 lb•in 1.1 N•m TYPICAL PERFORMANCE CURVES APT2x101_100DQ120J 600 250 200 TJ = 175°C 150 TJ = 125°C 100 TJ = 25°C 50 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 300 T = 125°C J V = 800V R 150A 500 400 100A 300 50A 200 100 TJ = -55°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 12000 T = 125°C J V = 800V R 10000 150A 100A 8000 6000 50A 4000 2000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 0 70 T = 125°C J V = 800V R 150A 60 100A 50 40 50A 30 20 10 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 1.4 1.2 trr trr IRRM 0.6 J 120 1.0 0.8 Duty cycle = 0.5 T = 175°C 140 Qrr IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 80 100 80 60 0.4 Qrr 0.2 0.0 40 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 700 600 500 400 300 200 100 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4230 Rev D 5-2011 CJ, JUNCTION CAPACITANCE (pF) 800 APT2x101_100DQ120J Vr diF /dt Adjus t +18V APT75GP120 0V D.U.T. 30μH trr/Q rr Wavefor m PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 I F - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 I RRM - Maximum Reverse Recovery Current 4 e diode trr - Revers e R ecovery Time, measured from zero crossing wher current goes from positive to negative, to the point at which the straight line through I RRM and 0.25 I RRM passes through zero. 5 1 4 Zer o . 5 0.25 I RRM 3 2 Q rr - Area Under the Curve Defined by I RRM and trr. Figure 10. Diode Reverse Recovery Waveform Definition SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Anode 2 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Anti-paralle l P aralle l APT2x100DQ120J APT2x101DQ120J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 053-4230 Rev D 5-2011 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2