APT2X101D30J

2 1 3 4 2 1 3 4 Anti-Paralle l P aralle l APT2X100D30J APT2X101D30J 2 3 1 4 SO 2 T- 27 "UL Recognized" file # E145592 IS OT OP ® APT2X101D30J APT2X100D30J 300V 100A 300V 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers • Low Leakage Current All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Density Characteristic / Test Conditions APT2X100_101D30J VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 115°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 183 IF(RMS) IFSM TJ,TSTG TL UNIT Maximum D.C. Reverse Voltage 300 Volts Amps 1000 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) -55 to 150 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VF MIN Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V TYP MAX IF = 100A 1.2 1.4 IF =200A 1.5 IF = 100A, TJ = 125°C 1.0 VR = VR Rated Microsemi Website - http://www.microsemi.com Volts 500 VR = VR Rated, TJ = 125°C 1000 270 UNIT μA pF 053-4057 Rev C 3-2011 Symbol DYNAMIC CHARACTERISTICS APT2X100_101D30J Characteristic Symbol Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J - 36 trr Reverse Recovery Time - 47 Qrr Reverse Recovery Charge - 120 - 5 - 110 ns - 650 nC - 10 - 70 - 1490 - 37 MIN TYP IRRM IF = 100A, diF/dt = -200A/μs VR = 200V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 100A, diF/dt = -200A/μs VR = 200V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 100A, diF/dt = -1000A/μs VR = 200V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC Visolation WT Torque Characteristic / Test Conditions Junction-to-Case Thermal Resistance .42 RMS Voltage 20 Package Weight 29.2 g 0.9 0.7 0.30 0.25 0.5 Note: 0.20 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.45 0.35 0.3 0.15 t1 t2 0.10 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.05 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 0.1 °C/W oz Maximum Terminal & Mounting Torque 0.40 UNIT 1.03 Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4057 Rev C 3-2011 MAX 10 lb•in 1.1 N•m TYPICAL PERFORMANCE CURVES IF, FORWARD CURRENT (A) 200 150 TJ = 25°C TJ = 150°C 100 50 TJ = -55°C TJ = 125°C trr, REVERSE RECOVERY TIME (ns) 175A 250 0 0 0.5 1 1.5 2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 80 60 40 20 T =125°C J V =200V R 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 1600 R IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 50A 0 200 40 T =125°C J V =200V 175A 1400 100A 1200 1000 50A 800 600 400 200 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change T =125°C J V =200V 35 175A R 30 25 100A 20 50A 15 10 5 0 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 0 200 200 1.4 1.2 Duty cycle = 0.5 T =150°C 180 Qrr trr J 160 1.0 140 IRRM 0.8 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 100A 100 0 1800 trr 0.6 120 100 80 60 0.4 Qrr 0.2 0.0 APT2X100_101D30J 120 300 40 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. Case Temperature 3500 3000 2500 2000 1500 1000 500 0 .6 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4057 Rev C 3-2011 CJ, JUNCTION CAPACITANCE (pF) 4000 APT2X100_101D30J Vr diF /dt Adjust +18V APT30M30LLL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Anti-paralle l P aralle l APT2X100D30J Anode 2 12.6 (.496) 12.8 (.504) APT2X101D30J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 053-4057 Rev C 3-2011 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2