2
3
2
2
3
3
1
1
4
1
4
4
Anti-Parallel
Parallel
APT2X100D40J
APT2X101D40J
27
2
T-
SO
APT2X101D40J
APT2X100D40J
400V 100A
400V 100A
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular SOT-227 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
• Low Leakage Current
MAXIMUM RATINGS
Symbol
VR
Density
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT2X101_100D40J
UNIT
400
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 99°C, Duty Cycle = 0.5)
100
RMS Forward Current (Square wave, 50% duty)
164
IF(RMS)
IFSM
TJ,TSTG
Amps
1000
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
-55 to 150
Operating and StorageTemperature Range
°C
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
TYP
MAX
IF = 100A
1.3
1.5
IF = 200A
1.6
IF = 100A, TJ = 125°C
1.2
VR = VR Rated
APT Website - http://www.advancedpower.com
Downloaded from Elcodis.com electronic components distributor
Volts
500
VR = VR Rated, TJ = 125°C
1000
260
UNIT
µA
pF
9-2004
VF
MIN
053-4007 Rev E
Symbol
DYNAMIC CHARACTERISTICS
APT2X101_100D40J
Characteristic
Symbol
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C
F
F
R
J
-
37
trr
Reverse Recovery Time
-
50
Qrr
Reverse Recovery Charge
-
150
-
6
-
150
ns
-
1050
nC
-
13
-
90
ns
-
2100
nC
-
39
Amps
MIN
TYP
IRRM
IF = 100A, diF/dt = -200A/µs
VR = 268V, TC = 25°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 100A, diF/dt = -200A/µs
VR = 268V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 100A, diF/dt = -800A/µs
Maximum Reverse Recovery Current
VR = 268V, TC = 125°C
ns
nC
7
17
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Symbol
MAX
RθJC
Junction-to-Case Thermal Resistance
.33
RθJA
Junction-to-Ambient Thermal Resistance
20
WT
Package Weight
Torque
oz
29.2
g
10
lb•in
1.1
N•m
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.20
0.5
Note:
0.15
0.10
0.3
0.05
0.1
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.35
0.25
Duty Factor D = t1/t2
10-5
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.05
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
9-2004
Junction
temp (°C)
053-4007 Rev E
t1
t2
0
Power
(watts)
0.0673 °C/W
0.0182 J/°C
0.188 °C/W
0.361 J/°C
0.0743 °C/W
5.17 J/°C
Case temperature (°C)
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Downloaded from Elcodis.com electronic components distributor
°C/W
1.03
Maximum Terminal & Mounting Torque
0.30
UNIT
TYPICAL PERFORMANCE CURVES
200
150
100
TJ = 25°C
TJ = 125°C
0
TJ = 150°C
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
250
50
0.5
1
1.5
2
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
50A
100
80
60
40
TJ = 125°C
VR = 268V
0
200
400
600
800
1000
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
40
TJ = 125°C
VR = 268V
2000
200A
1500
50A
1000
100A
500
0
200
400
600
800
1000
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
100A
120
0
0
0
100A
30
25
20
50A
15
10
5
0
200
400
600
800
1000
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
200
Duty cycle = 0.5
TJ = 150°C
180
Qrr
1.2
200A
TJ = 125°C
VR = 268V
35
0
1.4
160
trr
1.0
140
0.8
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 800A/µs)
200A
140
20
TJ = -55°C
2500
trr
0.6
IRRM
0.4
Qrr
0.2
0.0
APT2X101_100D40J
160
300
120
100
80
60
40
20
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
2500
2000
9-2004
1500
1000
500
0
.3
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
Downloaded from Elcodis.com electronic components distributor
053-4007 Rev E
CJ, JUNCTION CAPACITANCE
(pF)
3000
APT2X101_100D40J
Vr
diF /dt Adjust
+18V
APT50M50L2LL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
0.25 IRRM
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
9-2004
053-4007 Rev E
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
38.0 (1.496)
38.2 (1.504)
30.1 (1.185)
30.3 (1.193)
Dimensions in Millimeters and (Inches)
1.95 (.077)
2.14 (.084)
Anti-parallel
Parallel
APT2X100D40J
APT2X101D40J
Anode 2
Cathode 2
Cathode 1 Cathode 1
Anode 1
Anode 1
Anode 2
Cathode 2
ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Downloaded from Elcodis.com electronic components distributor
