APT2X101S20J

2 2 3 3 1 1 27 2 T- 4 SO 4 Parallel APT2X101S20J "UL Recognized" APT2X101S20J 200V 120A file # E145592 ISOTOP fi DUAL DIE ISOTOP® PACKAGE HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Rectifiers in Switchmode Power • • • • • • • • • Ultrafast Recovery Times Soft Recovery Characteristics Popular SOT-227 Package Rugged Avalanche Energy Rated • Low Forward Voltage • High Blocking Voltage • Low Leakage Current Supplies (SMPS) • Free Wheeling Diode in Low Voltage Converters All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Low Losses Low Noise Switching Cooler Operation Higher Reliability Systems Increased System Power Density Characteristic / Test Conditions APT2X101S20J UNIT 200 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 105°C, Duty Cycle = 0.5) 120 IF(RMS) RMS Forward Current (Square wave, 50% duty) 213 IFSM TJ,TSTG EAVL Amps 1000 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Avalanche Energy (2A, 50mH) -55 to 150 °C 100 mJ STATIC ELECTRICAL CHARACTERISTICS Forward Voltage TYP MAX IF = 100A .89 .95 IF = 200A 1.06 IF = 100A, TJ = 125°C IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Downloaded from Elcodis.com electronic components distributor Volts .76 VR = 200V 2 VR = 200V, TJ = 125°C Microsemi Website - http://www.microsemi.com UNIT 40 470 mA 7-2006 VF MIN pF 053-6023 Rev C Symbol DYNAMIC CHARACTERISTICS APT2X101S20J Characteristic Symbol Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM MIN TYP - 70 ns - 240 nC - 6 - 110 ns - 690 nC - 11 - 95 ns - 1750 nC - 32 Amps MIN TYP IF = 100A, diF/dt = -200A/µs VR = 133V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 100A, diF/dt = -200A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 100A, diF/dt = -700A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current MAX - - UNIT Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC Characteristic / Test Conditions Junction-to-Case Thermal Resistance VIsolation WT RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) UNIT .33 °C/W Volts 2500 Package Weight Torque MAX 1.03 oz 29.2 g Maximum Terminal & Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.30 0.25 0.7 0.20 0.5 Note: PDM 0.15 0.3 0.10 0 0.1 SINGLE PULSE 0.05 10-5 Duty Factor D = t1/t2 10-4 10-3 Peak TJ = PDM x ZθJC + TC 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2006 TJ ( C) 053-6023 Rev C t1 t2 0.05 TC ( C) 0.0673 0.188 0.0743 Dissipated Power (Watts) 0.0182 0.361 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 5.17 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL Downloaded from Elcodis.com electronic components distributor TYPICAL PERFORMANCE CURVES 180 TJ = 25°C TJ = 125°C 60 0 TJ = 150°C 0 2000 130A 100A 1000 50A 500 0 60 40 20 0 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 0 130A 30 25 20 100A 15 50A 10 5 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 1.2 250 Duty cycle = 0.5 TJ = 150°C Qrr t rr 1.0 t rr 200 I RRM 0.8 Qrr 0.6 IF(AV) (A) 150 100 0.4 50 0.2 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 6000 50 200 100 PEAK AVALANCHE CURRENT (A) 5000 4000 3000 2000 1000 0 25 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage Downloaded from Elcodis.com electronic components distributor 50 10 7-2006 Kf, DYNAMIC PARAMETERS (Normalized to 700A/µs) TJ = 125°C VR = 133V 35 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change CJ, JUNCTION CAPACITANCE (pF) TJ = 125°C VR = 133V 40 TJ = 125°C VR = 133V 1500 80 TJ = -55°C 0.5 1.0 1.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 130A 50A 5 1 1 10 100 1000 2500 Time in Avalanche (µs) Figure 9. Single Pulse UIS SOA 053-6023 Rev C Qrr, REVERSE RECOVERY CHARGE (nC) 2500 trr, REVERSE RECOVERY TIME (ns) 240 100A 100 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 300 120 APT2X101S20J 120 360 APT2X101S20J Vr diF /dt Adjust +18V APT20M20LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 053-6023 Rev C 7-2006 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Parallel APT2X101S20J Cathode 1 Anode 1 Cathode 2 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 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