APT2X151DL60J

2 3 1 4 2 1 Anti-Parallel APT2X150DL60J APT2X151DL60J APT2X150DL60J 3 4 600V 150A Parallel APT2X151DL60J Ultrafast Soft Recovery Dual Rectifier Diode 3 2 PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times (trr) • Low Losses • Low Forward Voltage • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • • • • • High Blocking Voltage • Increased System Power Density Snubber Diode Uninterruptible Power Supply Induction Heating High Speed Rectifiers "UL Recongnized" VR All Ratings per Diode: TC = 25°C unless otherwise specified. Characteristic / Test Conditions Ratings Unit 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward current (TC = 40°C, Duty Cycle = 0.5) 150 IF(RMS) RMS Forward Currrent (Square wave, 50% duty) 165 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 1000 IFSM TJ, TSTG file # 145592 ISOTOP fi • Low Leakage Current MAXIMUM RATINGS Symbol SO • Soft Recoverery Characteristics • Low Noise Switching • Free Wheeling Diode - Motor Controllers - Converters 27 2 T- 4 1 Operating and Storage Junction Temperature Range Amps -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Min Typ Max IF = 150A 1.25 1.6 IF = 300A 2.0 IF = 150A, TJ = 125°C 1.25 Volts VR = 600V 25 VR = 600V, TJ = 125°C 250 μA 139 1 Continuous current limited by package lead temperature. Microsemi Website - http://www.microsemi.com Unit pF 052-6320 Rev B 6 - 2009 Symbol APT2X151_150DL60J DYNAMIC CHARACTERISTICS Symbol Characteristic / Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr Min Typ IF = 1A, diF/dt = -15A/μs, VR = 30V, TJ = 25°C Max Unit 51 ns 408 IF = 150A, diF/dt = -200A/μs VR = 400V, TC = 25°C Reverse Recovery Time IF = 150A, diF/dt = -200A/μs VR = 400V, TC = 125°C 2387 nC 13 Amps 639 ns 7253 nC Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current 21 Amps trr Reverse Recovery Time 299 ns Qrr Reverse Recovery Charge 12075 nC IRRM Maximum Reverse Recovery Current 68 Amps IF = 150A, diF/dt = -1000A/ μs VR = 400V, TC = 125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance VIsolation WT Min RMS Voltage (50-60mHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Typ Max Unit 0.56 °C/W 2500 1.03 oz 29.2 g Package Weight Torque 10 lb·in 1.1 N·m Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.5 0.4 0.3 Note: 0.2 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.6 t1 t2 0.1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0 10-5 10-4 10-3 10-2 10 -1 1.0 052-6320 Rev B 6 - 2009 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TYPICAL PERFORMANCE CURVES TJ= 125°C TJ= 150°C TJ= 55°C 300 250 TJ= 25°C 200 150 100 50 0 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage T = 125°C J V = 400V 150A R 12000 75A 10000 8000 6000 4000 2000 0 R 75A 400 300 200 100 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 80 70 T = 125°C J V = 400V R 150A 60 50 75A 40 30 20 10 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 200 180 1 160 0.8 140 tRR IRRM IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 T = 125°C J V = 400V 500 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 14000 150A 600 trr, COLLECTOR CURRENT (A) IF, FORWARD CURRENT (A) 350 0 APT2X151_150DL60J 700 400 0.6 QRR 0.4 120 100 80 60 40 0.2 20 0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 1200 1000 800 600 400 200 0 1 10 100 500 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 052-6320 Rev B 6 - 2009 CJ, JUNCTION CAPACITANCE (pF) 1400 APT2X151_150DL60J Vr diF /dt Adjust +18V 0V D.U.T. trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 1 4 6 Zero 5 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 0.25 IRRM 3 Slope = diM/dt 2 Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 052-6320 Rev B 6 - 2009 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Anode 2 Anti-parallel Parallel APT2X100D60J APT2X101D60J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2