2
1
3
4
2
1
Anti-Parallel
APT2X60D120J
3
4
2
1
3
4
SO
Parallel
APT2X61D120J
2
T-
27
"UL Recognized"
ISOTOP ®
file # E145592
®
APT2X61D120J
APT2X60D120J
1200V
1200V
53A
53A
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular SOT-227 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
• Low Leakage Current
MAXIMUM RATINGS
Symbol
VR
Density
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT2X61_60D120J
UNIT
1200
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 101°C, Duty Cycle = 0.5)
53
RMS Forward Current (Square wave, 50% duty)
75
IF(RMS)
IFSM
TJ,TSTG
TL
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Amps
540
-55 to 175
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 60A
2.0
2.5
IF = 120A
2.3
IF = 60A, TJ = 125°C
1.8
Volts
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
APT Website - http://www.advancedpower.com
60
UNIT
µA
pF
10-2005
VF
Characteristic / Test Conditions
053-0012 Rev F
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT2X61_60D120J
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 60A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 800V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 60A, diF/dt = -200A/µs
IF = 60A, diF/dt = -1000A/µs
VR = 800V, TC = 125°C
Maximum Reverse Recovery Current
MIN
TYP
MAX
UNIT
-
38
-
400
-
1200
-
6
-
470
ns
-
4000
nC
-
13
-
200
ns
-
6200
nC
-
47
Amps
MIN
TYP
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
RθJC
VIsolation
WT
Torque
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
MAX
UNIT
.56
°C/W
Volts
2500
Package Weight
1.03
oz
29.2
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.50
0.40
0.7
0.30
0.5
0.20
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.60
0.3
t2
0.10
0
t
0.1
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
10-2005
Junction
temp (°C)
053-0012 Rev F
t1
Power
(watts)
0.148
0.006
0.238
0.0909
0.174
0.524
Case temperature (°C)
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
200
140
TJ = 150°C
100
80
TJ = 25°C
TJ = 125°C
60
40
TJ = -55°C
20
0
0
0.5
1
1.5
2
2.5
3
3.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
9000
T = 125°C
J
V = 800V
8000
R
120A
7000
6000
60A
5000
4000
3000
30A
2000
1000
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
trr, REVERSE RECOVERY TIME
(ns)
160
60A
300
30A
200
100
50
T = 125°C
J
V = 800V
R
120A
40
30
60A
20
30A
10
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
J
70
Qrr
0.8
Duty cycle = 0.5
T = 175°C
80
trr
IRRM
R
0
60
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
400
90
1.0
Qrr
0.6
50
40
30
0.4
trr
0.2
0.0
500
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
1.4
1.2
T = 125°C
J
V = 800V
120A
0
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
180
120
APT2X61_60D120J
600
20
10
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
500
400
10-2005
300
200
100
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-0012 Rev F
CJ, JUNCTION CAPACITANCE
(pF)
600
APT2X61_60D120J
Vr
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
0.25 IRRM
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
053-0012 Rev F
10-2005
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
1.95 (.077)
2.14 (.084)
Anti-parallel
Anode 2
Parallel
APT2X60D120J
APT2X61D120J
Cathode 1 Cathode 1
Anode 1
Anode 1
Anode 2
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
Cathode 2
Cathode 2
ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.