APT2X60DQ60J

2 1 3 4 2 1 Anti-Parallel APT2x60DQ60J 3 4 2 1 3 4 SO Parallel APT2x61DQ60J 2 T- 27 "UL Recognized" ISOTOP ® file # E145592 APT2x61DQ60J APT2x60DQ60J 600V 600V 60A 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating • Low Leakage Current • High Speed Rectifiers • Avalanche Energy Rated -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2x61_60DQ60J UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 92°C, Duty Cycle = 0.5) 60 RMS Forward Current (Square wave, 50% duty) 79 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 600 Operating and StorageTemperature Range 20 mJ -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 60A 1.7 2.3 IF = 120A 2.0 IF = 60A, TJ = 125°C 1.4 VR = 600V Microsemi Website - http://www.microsemi.com Volts 25 VR = 600V, TJ = 125°C 500 145 UNIT µA pF 7-2006 VF Characteristic / Test Conditions 053-4207 Rev E Symbol DYNAMIC CHARACTERISTICS Symbol APT2x61_60DQ60J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 60A, diF/dt = -200A/µs IF = 60A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 160 - 70 - 100 - 4 - 140 ns - 690 nC - 9 - 80 ns - 1540 nC - 31 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MAX UNIT .60 °C/W Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.60 D = 0.9 0.50 0.7 0.40 0.5 0.20 0.3 0.10 0 Note: PDM 0.30 t2 t 0.1 0.05 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2006 TJ (°C) 053-4207 Rev E t1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC TC (°C) 0.159 0.255 0.186 Dissipated Power (Watts) 0.0056 0.0849 0.489 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.70 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVES 200 140 TJ = 175°C 100 80 TJ = 125°C 60 40 TJ = -55°C 20 0 0 Qrr, REVERSE RECOVERY CHARGE (nC) 2500 T = 125°C J V = 400V R 2000 120A 60A 1500 1000 30A 500 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 120 R 60A 100 30A 80 60 40 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 60 T = 125°C J V = 400V R 50 120A 40 30 60A 20 30A 10 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 100 Qrr Duty cycle = 0.5 T = 175°C trr 1.0 T = 125°C J V = 400V 120A 140 20 TJ = 25°C 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage J 80 0.8 IRRM IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) trr, REVERSE RECOVERY TIME (ns) 160 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 180 120 APT2x61_60DQ60J 160 trr 0.6 60 40 0.4 Qrr 0.2 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 20 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 500 400 7-2006 300 200 100 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4207 Rev E CJ, JUNCTION CAPACITANCE (pF) 600 APT2x61_60DQ60J Vr diF /dt Adjust +18V APT60M75L2LL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 053-4207 Rev E 7-2006 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2x61DQ60J APT2x60DQ60J Anode 2 Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.